FDG6342L ,Integrated Load SwitchApplications High performance trench technology for extremely low rDS(on) Power management Compa ..
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FDG6342L
Integrated Load Switch
FDG6342L Integrated Load Switch March 2008 FDG6342L tm Integrated Load Switch Features General Description Max r = 150mΩ at V = 4.5V, I = –1.5A This device is particularly suited for compact power DS(on) GS D management in portable electronic equipment where 2.5V to 8V Max r = 195mΩ at V = 2.5V, I = –1.3A DS(on) GS D input and 1.5A output current capability are needed. This load Max r = 280mΩ at V = 1.8V, I = –1.1A switch integrates a small N-Channel power MOSFET (Q1) that DS(on) GS D drives a large P-Channel power MOSFET (Q2) in one tiny Max r = 480mΩ at V = 1.5V, I = –0.9A DS(on) GS D SC70-6 package. Control MOSFET (Q1) includes Zener protection for ESD ruggedness ( >4KV Human body model) Applications High performance trench technology for extremely low r DS(on) Power management Compact industry standard SC70-6 surface mount package Load switch RoHS Compliant Q2 Equivalent Circuit 4 3 Vout,C1 Vin,R1 OUT IN V DROP ON/OFF 5 2 Vout,C1 Q1 6 1 R2 R1,C1 ON/OFF Pin 1 SC70-6 See Application Circuit MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Gate to Source Voltage (Q2) ±8 V IN V Gate to Source Voltage (Q1) –0.5 to 8 V ON/OFF Load Current -Continuous (Note 2) –1.5 I A Load -Pulsed (Note 2) –6 Power Dissipation for Single Operation (Note 1a) 0.36 P W D (Note 1b) 0.3 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient Single operation (Note 1a) 350 θJA °C/W R Thermal Resistance, Junction to Ambient Single operation (Note 1b) 415 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .2L FDG6342L SC70-6 7’’ 8mm 3000units 1 ©2008 FDG6342L Rev.B1
