FDG6331L ,Integrated Load SwitchFeatures This device is particularly suited for compact power • –0.8 A, –8 V. R = 260 mΩ @ V = –4.5 ..
FDG6331L_NL ,Integrated Load SwitchApplications • High performance trench technology for extremely • Power management low R DS(ON)• L ..
FDG6332C ,20V N & P-Channel PowerTrench MOSFETsFDG6332CFDG6332C® ®PowerTrench The N & P-Channel MOSFETs are produced using• 0.7 A, 20V.R = 300 ..
FDG6332C ,20V N & P-Channel PowerTrench MOSFETsapplications where the bigger more expensiveTSSOP-8 and SSOP-6 packages are impractical.• High perf ..
FDG6332C ,20V N & P-Channel PowerTrench MOSFETsElectrical Characteristics T = 25°C unless otherwise notedAMinTypUnitsV = 0 V,I = 250 μAVDDrain–Sou ..
FDG6332C ,20V N & P-Channel PowerTrench MOSFETsApplicationsDS(ON)low RGSDS(ON) @ VGSDS(ON) @ VQ2GSDS(ON) @ VGSDS(ON) @ VQ1
FP-2R5CM221M-VAR , Functional Polymer Aluminum Solid Electrolytic Capacitors
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FP301 ,TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FP303 ,TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FP304 ,TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC ConverterAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FP31QF , 2-Watt HFET
FDG6331L
Integrated Load Switch
FDG6331L April 2001 FDG6331L Integrated Load Switch General Description Features This device is particularly suited for compact power • –0.8 A, –8 V. R = 260 mΩ @ V = –4.5 V DS(ON) GS management in portable electronic equipment where R = 330 mΩ @ V = –2.5 V DS(ON) GS 2.5V to 8V input and 0.8A output current capability are needed. This load switch integrates a small N-Channel R = 450 mΩ @ V = –1.8 V DS(ON) GS power MOSFET (Q1) that drives a large P-Channel • Control MOSFET (Q1) includes Zener protection for power MOSFET (Q2) in one tiny SC70-6 package. ESD ruggedness (>6KV Human body model) Applications • High performance trench technology for extremely • Power management low R DS(ON) • Load switch • Compact industry standard SC70-6 surface mount package Equivalent Circuit Q2 Vin,R1 Vout,C1 4 3 IN +– OUT V DROP ON/OFF Vout,C1 5 2 Q1 R1,C1 R2 6 1 ON/OFF Pin 1 SC70-6 See Application Circuit o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Gate-Source Voltage (Q2) ± 8 V IN VON/OFF Gate-Source Voltage (Q1) –0.5 to 8 V I Load Current – Continuous (Note 2) –0.8 A Load – Pulsed (Note 2) –2.4 Maximum Power Dissipation (Note 1) 0.3 PD W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 415 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .31 FDG6331L 7’’ 8mm 3000 units FDG6331L Rev B(W) 2001
