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FDG6317NZ
Dual 20V N-Channel PowerTrench MOSFET
FDG6317NZ January 2004 FDG6317NZ Ò Dual 20v N-Channel PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed · 0.7 A, 20 V. R = 400 mW @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 550 mW @ V = 2.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized use · ESD protection diode (note 3) in small switching regulators, providing an extremely low R and gate charge (Q ) in a small package. · Low gate charge DS(ON) G · High performance trench technology for extremely Applications low R DS(ON) · DC/DC converter · Compact industry standard SC70-6 surface mount · Power management package · Loadswitch S G D D G Pin 1 S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage V GSS ± 12 I Drain Current – Continuous (Note 1) 0.7 A D – Pulsed 2.1 P Power Dissipation for Single Operation (Note 1) 0.3 W D T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1) 415 R °C/W qJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .67 FDG6317NZ 7’’ 8mm 3000 units Ó2004 FDG6317NZ Rev B (W)
