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FDG6316PFSCN/a3000avaiP-Channel 1.8V Specified PowerTrench MOSFET

FDG6316P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –0.7 A, –12 V. R = 270 mΩ @ V = –4.5 V DS(ON) ..
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FDG6316P
P-Channel 1.8V Specified PowerTrench MOSFET
FDG6316P December 2001 FDG6316P     P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses • –0.7 A, –12 V. R = 270 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 360 mΩ @ V = –2.5 V DS(ON) GS It has been optimized for battery power management applications. R = 650 mΩ @ V = –1.8 V DS(ON) GS • Low gate charge Applications • High performance trench technology for extremely • Battery management low R DS(ON) • Load switch • Compact industry standard SC70-6 surface mount package S G S D 1 or 4 6 or 3 D G G 2 or 5 5 or 2 D G 4 or 1 Pin 1 D 3 or 6 S S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –12 V DSS V Gate-Source Voltage ± 8 V GSS I Drain Current – Continuous (Note 1) –0.7 A D – Pulsed –1.8 P Power Dissipation for Single Operation (Note 1) 0.3 W D T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1) 415 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .16 FDG6316P 7’’ 8mm 3000 units FDG6316P Rev D W) 2001

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