FDG6313N ,25V Dual N-Channel, Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDG6316 ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDG6316P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –0.7 A, –12 V. R = 270 mΩ @ V = –4.5 V DS(ON) ..
FDG6317NZ ,Dual 20V N-Channel PowerTrench MOSFETApplicationslow RDS(ON)• DC/DC converter• Compact industry standard SC70-6 surface mount• Power man ..
FDG6318P ,Dual P-Channel, Digital FETFeatures These dual P-Channel logic level enhancement mode • –0.5 A, –20 V. R = 780 mΩ @ V = –4.5 V ..
FDG6320C ,Dual N & P Channel Digital FETGeneral Description320DG November ..
FP1A3M ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A3M-T1B ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A3M-T2B ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A4A ,Hybrid transistorDATA SHEETCOMPOUND TRANSISTORFP1 SERIESon-chip resistor PNP silicon epitaxial transistorFor mid-s ..
FP1A4M ,Hybrid transistorDATA SHEETCOMPOUND TRANSISTORFP1 SERIESon-chip resistor PNP silicon epitaxial transistorFor mid-s ..
FP1A4M-T1B ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FDG6313N
25V Dual N-Channel, Digital FET
April 2002 FDG6313N Dual N-Channel, Digital FET General Description Features 25 V, 0.50 A continuous, 1.5 A peak. These dual N-Channel logic level enhancement mode R = 0.45 Ω @ V = 4.5 V, field effect transistors are produced using Fairchild's DS(ON) GS proprietary, high cell density, DMOS technology. This R =0.60 Ω @ V = 2.7 V. DS(ON) GS very high density process is especially tailored to Very low level gate drive requirements allowing direct minimize on-state resistance. This device has been operation in 3 V circuits (V < 1.5 V). designed especially for low voltage applications as a GS(th) replacement for bipolar digital transistors and small Gate-Source Zener for ESD ruggedness signal MOSFETs. (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package. TM TM SO-8 SOT-23 SuperSOT -6 SuperSOT -8 SC70-6 SOT-223 S2 1 or 4 * 6 or 3 G2 D1 2 or 5 5 or 2 D2 G1 S1 4 or 1 * 3 or 6 SC70-6 * The pinouts are symmetrical; pin 1 and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter FDG6313N Units V Drain-Source Voltage 25 V DSS - 0.5 to +8 V Gate-Source Voltage V GSS I Drain/Output Current - Continuous 0.5 A D - Pulsed 1.5 P Maximum Power Dissipation (Note 1) 0.3 W D T ,T Operating and Storage Temperature Range -55 to 150 °C J STG ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100 pF / 1500 Ω) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient 415 °C/W θJA FDG6313N Rev.A .33
