FDG6308P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –0.6 A, –20 V. R = 0.40 Ω @ V = –4.5 VDS(ON) GSF ..
FDG6308P ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FDG6313N ,25V Dual N-Channel, Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDG6316 ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDG6316P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –0.7 A, –12 V. R = 270 mΩ @ V = –4.5 V DS(ON) ..
FDG6317NZ ,Dual 20V N-Channel PowerTrench MOSFETApplicationslow RDS(ON)• DC/DC converter• Compact industry standard SC70-6 surface mount• Power man ..
FP1A3M ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A3M-T1B ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A3M-T2B ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A4A ,Hybrid transistorDATA SHEETCOMPOUND TRANSISTORFP1 SERIESon-chip resistor PNP silicon epitaxial transistorFor mid-s ..
FP1A4M ,Hybrid transistorDATA SHEETCOMPOUND TRANSISTORFP1 SERIESon-chip resistor PNP silicon epitaxial transistorFor mid-s ..
FP1A4M-T1B ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FDG6308P
P-Channel 1.8V Specified PowerTrench MOSFET
FDG6308P October 2000 PRELIMINARY FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses • –0.6 A, –20 V. R = 0.40 Ω @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 0.55 Ω @ V = –2.5 V DS(ON) GS It has been optimized for battery power management applications. R = 0.80 Ω @ V = –1.8 V DS(ON) GS • Low gate charge Applications • High performance trench technology for extremely • Battery management low R DS(ON) • Load switch • Compact industry standard SC70-6 surface mount package S G S D 1 or 4 6 or 3 D G G 2 or 5 5 or 2 D G 4 or 1 Pin 1 D 3 or 6 S S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ± 8 V GSS I Drain Current – Continuous (Note 1) –0.6 A D – Pulsed –1.8 P Power Dissipation for Single Operation (Note 1) 0.3 W D T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1) 415 RθJA °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .08 FDG6308P 7’’ 8mm 3000 units 2000 FDG6308P Rev B(W)
