FDG6304P ,Dual P-Channel, Digital FETJuly 1999 FDG6304P Dual P-Channel, Digital FET
FDG6306P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P -Channel 2.5V specified MOSFET is a rugged • –0.6 A, –20 V. R = 420 mΩ @ V = –4.5 V ..
FDG6308P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –0.6 A, –20 V. R = 0.40 Ω @ V = –4.5 VDS(ON) GSF ..
FDG6308P ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FDG6313N ,25V Dual N-Channel, Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDG6316 ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FP15R12KT3 , IGBT-Wechselrichter / IGBT-inverter
FP15R12W1T4 , EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
FP15R12YT3 , IGBT-modules
FP1A3M ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A3M-T1B ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FP1A3M-T2B ,Hybrid transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Up to 0.7 A current drive available On-chip bias resistor ..
FDG6304P
Dual P-Channel, Digital FET
July 1999 FDG6304P Dual P-Channel, Digital FET General Description Features -25 V, -0.41 A continuous, -1.5 A peak. These dual P-Channel logic level enhancement mode R = 1.1 W @ V = -4.5 V, field effect transistors are produced using Fairchild's DS(ON) GS proprietary, high cell density, DMOS technology. This R = 1.5 W @ V = -2.7 V. DS(ON) GS very high density process is especially tailored to Very low level gate drive requirements allowing direct minimize on-state resistance. This device has been operation in 3 V circuits (V < 1.5 V). designed especially for low voltage applications as a GS(th) replacement for bipolar digital transistors and small Gate-Source Zener for ESD ruggedness signal MOSFETs. (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package. TM TM SO-8 SOT-23 SuperSOT -6 SC70-6 SuperSOT -8 SOT-223 S2 1 or 4 G2 * 6 or 3 D1 2 or 5 5 or 2 D2 G1 S1 SC70-6 4 or 1 3 or 6 * *The pinouts are symmetrical; pin 1 and 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter FDG6304P Units V Drain-Source Voltage -25 V DSS V Gate-Source Voltage -8 V GSS I Drain/Output Current - Continuous -0.41 A D - Pulsed -1.5 P Maximum Power Dissipation (Note 1) 0.3 W D T ,T Operating and Storage Temperature Range -55 to 150 °C J STG ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100 pF / 1500 W) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W qJA FDG6304P Rev.E1 .04
