FDG361N ,N-Channel 100V Specified PowerTrench MOSFETGeneral DescriptionThese N-Channel 100V specified MOSFETs are • 0.6 A, 100 V. R = 500 mΩ @ V = 10 V ..
FDG361N ,N-Channel 100V Specified PowerTrench MOSFETApplications• Load switch• Battery protection• Power managementSD1 6D2 5GDPin 13 4DSC70-6oAbsolute ..
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FDG361N
N-Channel 100V Specified PowerTrench MOSFET
FDG361N August 2001 FDG361N N-Channel 100V Specified PowerTrench MOSFET Features General Description These N-Channel 100V specified MOSFETs are • 0.6 A, 100 V. R = 500 mΩ @ V = 10 V DS(ON) GS produced using Fairchild Semiconductor's advanced R = 550 mΩ @ V = 6.0 V DS(ON) GS PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low • Low gate charge (3.7nC typical) gate charge for superior switching performance. • Fast switching speed These devices have been designed to offer exceptional power dissipation in a very small footprint for • High performance trench technology for extremely applications where the bigger more expensive SO-8 low R and TSSOP-8 packages are impractical. DS(ON) Applications • Load switch • Battery protection • Power management S D 1 6 D 2 5 G D Pin 1 3 4 D SC70-6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 100 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 0.6 A D – Pulsed 2.0 Power Dissipation for Single Operation (Note 1a) 0.42 P W D (Note 1b) 0.38 T , T Operating and Storage Junction Temperature Range −55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 300 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1b) 333 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .61 FDG361N 7’’ 8mm 3000 units 2001 FDG361N Rev C(W)
