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FDG361N from XX

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FDG361N

Manufacturer: XX

N-Channel 100V Specified PowerTrench MOSFET

Partnumber Manufacturer Quantity Availability
FDG361N XX 4920 In Stock

Description and Introduction

N-Channel 100V Specified PowerTrench MOSFET The part FDG361N is manufactured by Fairchild Semiconductor. It is an N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET). Key specifications include:

- **Drain-Source Voltage (VDS):** 20V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Continuous Drain Current (ID):** 1.3A  
- **Power Dissipation (PD):** 1W  
- **On-Resistance (RDS(on)):** 0.065Ω (max) at VGS = 4.5V  
- **Threshold Voltage (VGS(th)):** 0.4V to 1V  
- **Package:** SOT-23  

These specifications are based on Fairchild Semiconductor's datasheet for the FDG361N.

Partnumber Manufacturer Quantity Availability
FDG361N 5020 In Stock

Description and Introduction

N-Channel 100V Specified PowerTrench MOSFET The FDG361N is a PowerTrench MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Here are its key specifications:  

- **Type**: N-Channel MOSFET  
- **Drain-Source Voltage (VDSS)**: 30V  
- **Continuous Drain Current (ID)**: 12A  
- **Pulsed Drain Current (IDM)**: 48A  
- **Power Dissipation (PD)**: 2.5W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 25mΩ (at VGS = 10V)  
- **Package**: TO-252 (DPAK)  
- **Technology**: PowerTrench (Low RDS(on), Fast Switching)  

These are the factual specifications as provided by the manufacturer.

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