FDG329N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDG329N
FDG329N ,20V N-Channel PowerTrench MOSFETFDG329NFDG329N® ®PowerTrenchThis N-Channel MOSFET has been designed• 1.5 A, 20 V.R = 90 m Ω = 4.5 ..
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FDG329N
20V N-Channel PowerTrench MOSFET
FDG329N FDG329N Ò Ò PowerTrench This N-Channel MOSFET has been designed · 1.5 A, 20 V.R = 90 m W = 4.5 V. specifically to improve the overall efficiency of DC/DC R = 115 m W = 2.5 V GS converters using either synchronous or conventional switching PWM controllers. It has been optimized use · Fast switching speed in small switching regulators, providing an extremely R and gate charge (Q) in a small package. ON)G · Low gate charge (3.3 nC typical) · High performance trench technology for extremely · DC/DC converter · Power management · High power and current handling capability. · Load switch S D16 D 25 G D Pin 134 D o T=25C unless otherwise notedA RatingsUnits VDrain-Source VoltageV VGate-Source Voltage ±V IDrain Current– ContinuousAD – Pulsed6 PPower Dissipation for Single OperationWD T, TOperating and Storage Junction Temperature Range-55 to +150 °CJ Thermal Characteristics Thermal Resistance, Junction-to-Ambient R°C/W q RThermal Resistance, Junction-to-Ambient °C/W q Device MarkingReel SizeTape widthQuantity FDG329N3000 units Ó FDG329N Rev C (W)2001 Fairchild Semiconductor International 8mm7’’.29 Device Package Marking and Ordering Information JA 333(Note 1b) JA 300(Note 1a) STG 0.38 (Note 1b) 0.42(Note 1a) 1.5(Note 1a) GSS 12 DSS 20 ParameterSymbol Absolute Maximum Ratings SC70-6 DS(ON) low R Applications DS( low DS(ON) @ V GSDS(ON) @ V FeaturesGeneral Description MOSFET20V N-Channel October 2001
