FDG328P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is produced in• –1.5 A, –20 V.R = 0.145 Ω @ V = –4.5 V ..
FDG329N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDG329N
FDG329N ,20V N-Channel PowerTrench MOSFETFDG329NFDG329N® ®PowerTrenchThis N-Channel MOSFET has been designed• 1.5 A, 20 V.R = 90 m Ω = 4.5 ..
FDG361N ,N-Channel 100V Specified PowerTrench MOSFETGeneral DescriptionThese N-Channel 100V specified MOSFETs are • 0.6 A, 100 V. R = 500 mΩ @ V = 10 V ..
FDG361N ,N-Channel 100V Specified PowerTrench MOSFETApplications• Load switch• Battery protection• Power managementSD1 6D2 5GDPin 13 4DSC70-6oAbsolute ..
FDG410NZ ,20V Single N-Channel PowerTrench?MOSFETApplications HBM ESD protection level > 2 kV (Note 3) DC/DC converter High performance trench te ..
FP106 ,TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FP107 ,TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FP10R12W1T4 , EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
FP10R12YT3 , IGBT-modules
FP1107R1-R23-R , High Current, High Frequency, Power Inductors
FP1189 , High Performance ½-Watt HFET(Heterostructure FET)
FDG328P
P-Channel 2.5V Specified PowerTrench MOSFET
FDG328P October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in • –1.5 A, –20 V.R = 0.145 Ω @ V = –4.5 V DS(ON) GS a rugged gate version of Fairchild Semiconductor’s R = 0.210 Ω @ V = –2.5 V DS(ON) GS advanced PowerTrench process. It has been optimized for power management applications for a wide range of • Low gate charge gate drive voltages (2.5V – 12V). • High performance trench technology for extremely Applications low R DS(ON) • Load switch • Compact industry standard SC70-6 surface mount • Power management package • DC/DC converter S D 1 6 D 2 5 G D 3 4 Pin 1 D SC70-6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ± 12 I Drain Current – Continuous (Note 1a) –1.5 A D – Pulsed –6 P Power Dissipation for Single Operation (Note 1a) 0.75 W D (Note 1b) 0.48 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1b) 260 RθJA °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .28 FDG328P 7’’ 8mm 3000 units 2000 Fairchild Semiconductor International FDG328P Rev C(W)
