FDG327NZ ,20V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 1.5 A, 20 V. R = 90 mΩ @ V = 4.5 V. DS(ON) GSs ..
FDG327NZ ,20V N-Channel PowerTrench MOSFETApplications • Low gate charge • DC/DC converter • High performance trench technology for extre ..
FDG328P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is produced in• –1.5 A, –20 V.R = 0.145 Ω @ V = –4.5 V ..
FDG329N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDG329N
FDG329N ,20V N-Channel PowerTrench MOSFETFDG329NFDG329N® ®PowerTrenchThis N-Channel MOSFET has been designed• 1.5 A, 20 V.R = 90 m Ω = 4.5 ..
FDG361N ,N-Channel 100V Specified PowerTrench MOSFETGeneral DescriptionThese N-Channel 100V specified MOSFETs are • 0.6 A, 100 V. R = 500 mΩ @ V = 10 V ..
FP103 ,PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode DC/DC Converter ApplicationsOrdering number:ENN3962APNP Epitaxial Planar Silicon TransistorSchottky Barrier DiodeFP103DC/DC Con ..
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FDG327NZ
20V N-Channel PowerTrench MOSFET
FDG327NZ December 2002 FDG327NZ 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 1.5 A, 20 V. R = 90 mΩ @ V = 4.5 V. DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 100 mΩ @ V = 2.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized use R = 140 mΩ @ V = 1.8 V DS(ON) GS in small switching regulators, providing an extremely low R and gate charge (Q ) in a small package. DS(ON) G • Fast switching speed Applications • Low gate charge • DC/DC converter • High performance trench technology for extremely • Power management low R DS(ON) • Load switch • High power and current handling capability. S D D G D Pin 1 D SC70-6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage GSS ± 8 I Drain Current – Continuous (Note 1a) 1.5 A D – Pulsed 6 P D Power Dissipation for Single Operation (Note 1a) 0.42 W (Note 1b) 0.38 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 300 R °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 333 θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .37 FDG327NZ 7’’ 8mm 3000 units FDG327NZ Rev B (W) 2002
