FDG326P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FDG327N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDG327N
FDG327N ,20V N-Channel PowerTrench MOSFETFDG327NFDG327N® ®PowerTrenchThis N-Channel MOSFET has been designed• 1.5 A, 20 V.R = 90 m Ω = 4.5 ..
FDG327NZ ,20V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 1.5 A, 20 V. R = 90 mΩ @ V = 4.5 V. DS(ON) GSs ..
FDG327NZ ,20V N-Channel PowerTrench MOSFETApplications • Low gate charge • DC/DC converter • High performance trench technology for extre ..
FDG328P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is produced in• –1.5 A, –20 V.R = 0.145 Ω @ V = –4.5 V ..
FP1016 , SILICON SURGE SUPPRESSOR DIODES
FP102 ,PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FP103 ,PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode DC/DC Converter ApplicationsOrdering number:ENN3962APNP Epitaxial Planar Silicon TransistorSchottky Barrier DiodeFP103DC/DC Con ..
FP106 ,TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FP107 ,TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FP10R12W1T4 , EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
FDG326P_NL
P-Channel 1.8V Specified PowerTrench MOSFET
FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses • –1.5 A, –20 V. R = 140 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 180 mΩ @ V = –2.5 V DS(ON) GS It has been optimized for battery power management applications. R = 250 mΩ @ V = –1.8 V DS(ON) GS • Low gate charge Applications • High performance trench technology for extremely • Battery management low R DS(ON) • Load switch • Compact industry standard SC70-6 surface mount package 1 6 2 5 3 3 4 SC70-6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ± 8 I Drain Current – Continuous (Note 1a) –1.5 A D – Pulsed –6 P Power Dissipation for Single Operation (Note 1a) 0.75 W D (Note 1b) 0.48 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1b) 260 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .26 FDG326P 7’’ 8mm 3000 units 2001 FDG326P Rev D(W)
