FDG315N ,N-Channel Logic Level PowerTrench MOSFETFeaturesThis N-Channel Logic Level MOSFET is produced using• 2 A, 30 V. R = 0.12 Ω @ V = 10 VDS(ON) ..
FDG316P ,P-Channel Logic Level PowerTrench MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced using• -1.6 A, -30 V. R = 0.19 Ω @ V = -10 VD ..
FDG318P ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Load switch• Compact industry standard SC70-6 surface mount• Power managem ..
FDG326P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –1.5 A, –20 V. R = 140 mΩ @ V = –4.5 VDS(ON) GSF ..
FDG326P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FDG327N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDG327N
FP0705R2-R10-R , High Current, Low-Profile Power Inductors
FP0705R2-R12-R , High Current, Low-Profile Power Inductors
FP0705R2-R15-R , High Current, Low-Profile Power Inductors
FP0705R2-R18-R , High Current, Low-Profile Power Inductors
FP1007R1-R22-R , High Current, High Frequency, Power Inductors
FP1007R2-R17-R , High Current, High Frequency, Power Inductors
FDG315N
N-Channel Logic Level PowerTrench MOSFET
FDG315N July 2000 FDG315N N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using • 2 A, 30 V. R = 0.12 Ω @ V = 10 V DS(ON) GS Fairchild Semiconductor's advanced PowerTrench R = 0.16 Ω @ V = 4.5 V. process that has been especially tailored to minimize DS(ON) GS on-state resistance and yet maintain superior switching performance. • Low gate charge (2.1nC typical). These devices are well suited for low voltage and • High performance trench technology for extremely low battery powered applications where low in-line power R . loss and fast switching are required. DS(ON) • Compact industry standard SC70-6 surface mount Applications package. • DC/DC converter • Load switch • Power Management S 1 6 D D 5 2 G D 3 3 4 D SC70-6 T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS ± V Gate-Source Voltage 20 V GSS (Note 1a) I Drain Current - Continuous 2A D - Pulsed 6 P D Power Dissipation for Single Operation (Note 1a) 0.75 W (Note 1b) 0.48 ° T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg Thermal Characteristics ° θ Thermal Resistance, Junction-to-Ambient (Note 1b) 260 R C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity 15 FDG315N 7’’ 8mm 3000 units . 2000 Fairchild Semiconductor International FDG315N Rev. C
