FDG314P ,Digital FET, P-ChannelFeaturesThis P-Channel enhancement mode field effect• -0.65 A, -25 V. R = 1.1 Ω @ V = -4.5 VDS(ON) ..
FDG315N ,N-Channel Logic Level PowerTrench MOSFETFeaturesThis N-Channel Logic Level MOSFET is produced using• 2 A, 30 V. R = 0.12 Ω @ V = 10 VDS(ON) ..
FDG316P ,P-Channel Logic Level PowerTrench MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced using• -1.6 A, -30 V. R = 0.19 Ω @ V = -10 VD ..
FDG318P ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Load switch• Compact industry standard SC70-6 surface mount• Power managem ..
FDG326P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –1.5 A, –20 V. R = 140 mΩ @ V = –4.5 VDS(ON) GSF ..
FDG326P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FP0705R2-R10-R , High Current, Low-Profile Power Inductors
FP0705R2-R12-R , High Current, Low-Profile Power Inductors
FP0705R2-R15-R , High Current, Low-Profile Power Inductors
FP0705R2-R18-R , High Current, Low-Profile Power Inductors
FP1007R1-R22-R , High Current, High Frequency, Power Inductors
FP1007R2-R17-R , High Current, High Frequency, Power Inductors
FDG314P
Digital FET, P-Channel
FDG314P July 2000 FDG314P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect • -0.65 A, -25 V. R = 1.1 Ω @ V = -4.5 V DS(ON) GS transistor is produced using Fairchild Semiconductor’s R = 1.5 Ω @ V = -2.7 V. proprietary, high cell density, DMOS technology. This DS(ON) GS very high density process is tailored to minimize on- state resistance at low gate drive conditions. This • Very low gate drive requirements allowing direct device is designed especially for battery power operation in 3V cirucuits (V <1.5 V). GS(th) applications such as notebook computers and cellular • Gate-Source Zener for ESD ruggedness phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. (>6 kV Human Body Model). • Compact industry standard SC70-6 surface mount Applications package. • Power Management • Load switch • Signal switch S 1 6 D D 5 2 G 3 D 3 4 D SC70-6 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage -25 V DSS V Gate-Source Voltage ±8V GSS I Drain Current - Continuous (Note 1a) -0.65 A D - Pulsed -1.8 PD Power Dissipation for Single Operation (Note 1a) 0.75 W (Note 1b) 0.48 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J stg ESD Electrostatic Discharge Rating MIL-STD-883D kV 6.0 Human Body Model (100pf/1500 Ohm) Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1b) 260 °C/W JA θ Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .14 FDG314P 7’’ 8mm 3000 units 2000 Fairchild Semiconductor International FDG314P Rev.C
