FDG313N ,Digital FET, N-ChannelFeaturesThis N-Channel enhancement mode field effect• 0.95 A, 25 V. R = 0.45 Ω @ V = 4.5 VDS(on) GS ..
FDG313N_NL ,Digital FET, N-ChannelApplications• Gate-Source Zener for ESD ruggedness• Load switch (>6kV Human Body Model).• Batte ..
FDG314P ,Digital FET, P-ChannelFeaturesThis P-Channel enhancement mode field effect• -0.65 A, -25 V. R = 1.1 Ω @ V = -4.5 VDS(ON) ..
FDG315N ,N-Channel Logic Level PowerTrench MOSFETFeaturesThis N-Channel Logic Level MOSFET is produced using• 2 A, 30 V. R = 0.12 Ω @ V = 10 VDS(ON) ..
FDG316P ,P-Channel Logic Level PowerTrench MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced using• -1.6 A, -30 V. R = 0.19 Ω @ V = -10 VD ..
FDG318P ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Load switch• Compact industry standard SC70-6 surface mount• Power managem ..
FP0705R2-R10-R , High Current, Low-Profile Power Inductors
FP0705R2-R12-R , High Current, Low-Profile Power Inductors
FP0705R2-R15-R , High Current, Low-Profile Power Inductors
FP0705R2-R18-R , High Current, Low-Profile Power Inductors
FP1007R1-R22-R , High Current, High Frequency, Power Inductors
FP1007R2-R17-R , High Current, High Frequency, Power Inductors
FDG313N
Digital FET, N-Channel
FDG313N July 2000 FDG313N Digital FET, N-Channel General Description Features This N-Channel enhancement mode field effect • 0.95 A, 25 V. R = 0.45 Ω @ V = 4.5 V DS(on) GS transistor is produced using Fairchild's proprietary, high R = 0.60 Ω @ V = 2.7 V. cell density, DMOS technology. This very high density DS(on) GS process is especially tailored to minimize on-state resistance. This device has been designed especially • Low gate charge (1.64 nC typical) for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET. • Very low level gate drive requirements allowing direct operation in 3V circuits (V < 1.5V). GS(th) Applications • Gate-Source Zener for ESD ruggedness • Load switch (>6kV Human Body Model). • Battery protection • Compact industry standard SC70-6 surface mount • Power management package. S D 1 6 D 2 5 G D 3 3 pi n 1 4 D SC70-6 T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter FDG313N Units V Drain-Source Voltage 25 V DSS V Gate-Source Voltage 8V GSS ± I Drain Current - Continuous (Note 1a) 0.95 A D - Pulsed 2 P Power Dissipation for Single Operation (Note 1a) 0.75 W D (Note 1b) 0.55 (Note 1c) 0.48 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° ESD Electrostatic Discharge Rating MIL-STD-883D 6kV Human Body Model (100pf / 1500 Ohm) Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1c) 260 C/W JA ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDG313N 7’’ 8mm 3000 units 13 . 1998 FDG313N Rev. C
