FDG312P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel MOSFET is produced using Fairchild• -1.2 A, -20 V. R = 0.18 Ω @ V = -4.5 VDS ..
FDG313N ,Digital FET, N-ChannelFeaturesThis N-Channel enhancement mode field effect• 0.95 A, 25 V. R = 0.45 Ω @ V = 4.5 VDS(on) GS ..
FDG313N_NL ,Digital FET, N-ChannelApplications• Gate-Source Zener for ESD ruggedness• Load switch (>6kV Human Body Model).• Batte ..
FDG314P ,Digital FET, P-ChannelFeaturesThis P-Channel enhancement mode field effect• -0.65 A, -25 V. R = 1.1 Ω @ V = -4.5 VDS(ON) ..
FDG315N ,N-Channel Logic Level PowerTrench MOSFETFeaturesThis N-Channel Logic Level MOSFET is produced using• 2 A, 30 V. R = 0.12 Ω @ V = 10 VDS(ON) ..
FDG316P ,P-Channel Logic Level PowerTrench MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced using• -1.6 A, -30 V. R = 0.19 Ω @ V = -10 VD ..
FP0705R2-R10-R , High Current, Low-Profile Power Inductors
FP0705R2-R12-R , High Current, Low-Profile Power Inductors
FP0705R2-R15-R , High Current, Low-Profile Power Inductors
FP0705R2-R18-R , High Current, Low-Profile Power Inductors
FP1007R1-R22-R , High Current, High Frequency, Power Inductors
FP1007R2-R17-R , High Current, High Frequency, Power Inductors
FDG312P
P-Channel 2.5V Specified PowerTrench MOSFET
FDG312P February 1999 FDG312P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild • -1.2 A, -20 V. R = 0.18 Ω @ V = -4.5 V DS(on) GS Semiconductor's advanced PowerTrench process that R = 0.25 Ω @ V = -2.5 V. has been especially tailored to minimize the on-state DS(on) GS resistance and yet maintain low gate charge for superior switching performance. These devices are • Low gate charge (3.3 nC typical). well suited for portable electronics applications. • High performance trench technology for extremely low R . Applications DS(ON) • Load switch • Compact industry standard SC70-6 surface mount • Battery protection package. • Power management S 1 6 D D 2 5 G D 3 3 4 D SC70-6 T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage 8V GSS ± I Drain Current - Continuous (Note 1) -1.2 A D - Pulsed -6 P Power Dissipation for Single Operation (Note 1a) 0.75 W D (Note 1b) 0.55 (Note 1c) 0.48 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C ° Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1) 260 C/W JA ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDG312P 7’’ 8mm 3000 units .12 1999 FDG312P Rev. C
