FDG1024NZ ,20V Dual N-Channel PowerTrench?MOSFETapplications as a Max r = 389 mΩ at V = 1.5 V, I = 0.8 ADS(on) GS Dreplacement for bipolar digita ..
FDG311N ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. R = 0.115 Ω @ V = 4.5 VDS( ..
FDG311N_NL ,N-Channel 2.5V Specified PowerTrench MOSFETApplications R .DS(ON)• Load switch Compact industry standard SC70-6 surface mount Power manag ..
FDG311N_NL ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. R = 0.115 Ω @ V = 4.5 VDS( ..
FDG312P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel MOSFET is produced using Fairchild• -1.2 A, -20 V. R = 0.18 Ω @ V = -4.5 VDS ..
FDG313N ,Digital FET, N-ChannelFeaturesThis N-Channel enhancement mode field effect• 0.95 A, 25 V. R = 0.45 Ω @ V = 4.5 VDS(on) GS ..
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FDG1024NZ
20V Dual N-Channel PowerTrench?MOSFET
® FDG1024NZ Dual N-Channel Power Trench MOSFET June 2010 FDG1024NZ ® Dual N-Channel PowerTrench MOSFET 20 V, 1.2 A, 175 mΩ Features General Description Max r = 175 mΩ at V = 4.5 V, I = 1.2 A This dual N-Channel logic level enhancement mode field effect DS(on) GS D transistors are produced using Fairchild’s proprietary, high cell Max r = 215 mΩ at V = 2.5 V, I = 1.0 A DS(on) GS D density, DMOS technology. This very high density process is Max r = 270 mΩ at V = 1.8 V, I = 0.9 A especially tailored to minimize on-state resistance. This device DS(on) GS D has been designed especially for low voltage applications as a Max r = 389 mΩ at V = 1.5 V, I = 0.8 A DS(on) GS D replacement for bipolar digital transistors and small signal HBM ESD protection level >2 kV (Note 3) MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with Very low level gate drive requirements allowing operation in different bias resistor values. 1.5 V circuits (V < 1 V) GS(th) Very small package outline SC70-6 RoHS Compliant S2 G2 S1 D1 1 6 D1 G1 2 5 G2 D2 G1 D2 3 4 S2 S1 SC70-6 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage ±8 V GS -Continuous T = 25°C (Note 1a) 1.2 A I A D -Pulsed 6 Power Dissipation T = 25°C (Note 1a) 0.36 A P W D Power Dissipation T = 25°C (Note 1b) 0.30 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 350 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 415 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .4N FDG1024NZ SC70-6 7 ” 8 mm 3000 units 1 ©2010 FDG1024NZ Rev.C
