FDFS6N754 ,30V Integrated N-Channel PowerTrench?MOSFET and Schottky DiodeApplicationsfor design flexibility DC/DC converters Low Gate Charge (Qg = 4nC) Low Mi ..
FDG1024NZ ,20V Dual N-Channel PowerTrench?MOSFETapplications as a Max r = 389 mΩ at V = 1.5 V, I = 0.8 ADS(on) GS Dreplacement for bipolar digita ..
FDG311N ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. R = 0.115 Ω @ V = 4.5 VDS( ..
FDG311N_NL ,N-Channel 2.5V Specified PowerTrench MOSFETApplications R .DS(ON)• Load switch Compact industry standard SC70-6 surface mount Power manag ..
FDG311N_NL ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. R = 0.115 Ω @ V = 4.5 VDS( ..
FDG312P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel MOSFET is produced using Fairchild• -1.2 A, -20 V. R = 0.18 Ω @ V = -4.5 VDS ..
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FDFS6N754
30V Integrated N-Channel PowerTrench?MOSFET and Schottky Diode
® FDFS6N754 Integrated N-Channel PowerTrench MOSFET and Schottky Diode Final Datasheet August 2006 FDFS6N754 tm ® Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56mΩ Features General Description Max r = 56mΩ at V = 0V, I = 4A DS(on) GS D The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very Max r = 75mΩ at V = 4.5V, I = 3.5A DS(on) GS D low forward voltage drop Schottky barrier rectifier in an SO- 8 package. V < 0.45V @ 2A F This device is designed specifically as a single package V < 0.28V @ 100mA F solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state Schottky and MOSFET incorporated into single power resistance. The independently connected Schottky diode surface mount SO-8 package allows its use in a variety of DC/DC converter topologies. Electrically independent Schottky and MOSFET pinout Applications for design flexibility DC/DC converters Low Gate Charge (Qg = 4nC) Low Miller Charge D D A 1 8 C C C 2 7 A C S 3 6 D G SO-8 S G 4 5 D A Pin 1 A MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Note 1a) 4 I A D -Pulsed 20 Power Dissipation for Dual Operation 2 P W D Power Dissipation for Single Operation (Note 1a) 1.6 V Schottky Repetitive Peak Reverse Voltage 20 V RRM I Schottky Average Forward Current (Note 1a) 2 A O T , T Operating and Storage Temperature -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDFS6N754 FDFS6N754 SO-8 330mm 12mm 2500 units ©2006 1 FDFS6N754 Rev. A
