FDFS6N548 ,30V Integrated N-Channel PowerTrench?MOSFET and Schottky Diodefeatures a fast switching, low gate Schottky and MOSFET incorporated into single power surface ch ..
FDFS6N754 ,30V Integrated N-Channel PowerTrench?MOSFET and Schottky DiodeApplicationsfor design flexibility DC/DC converters Low Gate Charge (Qg = 4nC) Low Mi ..
FDG1024NZ ,20V Dual N-Channel PowerTrench?MOSFETapplications as a Max r = 389 mΩ at V = 1.5 V, I = 0.8 ADS(on) GS Dreplacement for bipolar digita ..
FDG311N ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. R = 0.115 Ω @ V = 4.5 VDS( ..
FDG311N_NL ,N-Channel 2.5V Specified PowerTrench MOSFETApplications R .DS(ON)• Load switch Compact industry standard SC70-6 surface mount Power manag ..
FDG311N_NL ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. R = 0.115 Ω @ V = 4.5 VDS( ..
FP0705R2-R10-R , High Current, Low-Profile Power Inductors
FP0705R2-R12-R , High Current, Low-Profile Power Inductors
FP0705R2-R15-R , High Current, Low-Profile Power Inductors
FP0705R2-R18-R , High Current, Low-Profile Power Inductors
FP1007R1-R22-R , High Current, High Frequency, Power Inductors
FP1007R2-R17-R , High Current, High Frequency, Power Inductors
FDFS6N548
30V Integrated N-Channel PowerTrench?MOSFET and Schottky Diode
® FDFS6N548 Integrated N-Channel PowerTrench MOSFET and Schottky Diode January 2007 FDFS6N548 tm ® Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 7A, 23mΩ Features General Description Max r = 23mΩ at V = 10V, I = 7A The FDFS6N548 combines the exceptional performance of DS(on) GS D Fairchild's PowerTrench MOSFET technology with a very low Max r = 30mΩ at V = 4.5V, I = 6A DS(on) GS D forward voltage drop Schottky barrier rectifier in an SO-8 V < 0.45V @ 2A package. F V < 0.28V @ 100mA This device is designed specifically as a single package solution F for DC to DC converters. It features a fast switching, low gate Schottky and MOSFET incorporated into single power surface charge MOSFET with very low on-state resistance. The mount SO-8 package independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Electrically independent Schottky and MOSFET pinout for design flexibility Application Low Miller Charge DC/DC Conversion D D 1 8 A C C C A 2 7 C S 3 6 D G SO-8 S G D A 4 5 Pin 1 A MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Note 1a) 7 I A D -Pulsed 30 Power Dissipation for Dual Operation 2 P W D Power Dissipation for Single Operation (Note 1a) 1.6 E Drain-Source Avalanche Energy (Note 3) 12 mJ AS V Schotty Repetitive Peak Reverse Voltage 20 V RRM I Schotty Average Forward Current (Note 1a) 2 A O T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 78 θJA °C/W R Thermal Resistance, Junction to Case (Note 1) 40 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDFS6N548 FDFS6N548 SO-8 330mm 12mm 2500 units 1 ©2007 FDFS6N548 Rev.B
