FDFS6N303_NL ,30V N-Channel MOSFET with Schottky DiodeFeatures General DescriptionMOSFET with Schottky Diode DFS6N303 oAMOSFET ELECTRICALV = VI V ..
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FDFS6N303_NL
30V N-Channel MOSFET with Schottky Diode
6N303 FDFS October 2003 F N-Channel The FDFS6N303 incorporates a high cell density MOSFETA, 30 V. R = 0.035 W @ V 10 V. ) R = 0. W @ V = V.and low forward drop (0.35V) Schottky diode into a single) surface mount power package. The MOSFET and Schottky V < 0.28 V @ 0.1 A Fdiode are isolated inside the package. The general pur- V V @ 3 A Fpose pinout has been chosen to maximize flexibility and V V @ 6 A. Fease of use. This product is particularly suited for switch- ing applications such as DC/ and non-synchronous converters where the MOSFET is driven surface mount SO-8 package. as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable. bility. converter applications. TMTM DCA18 D C AC27C DS36 G DSG45 A1 A o TA F VV V±V I6AD P WD ) TJ o TA V V I2AO © 2003 FDFS6N303 Rev. D3 (Note 1a) Forward Current Average RRM 30Repetitive Peak Reverse Voltage C unless otherwise noted = 25 Maximum RatingsSchottky Diode STG °C-55 to 150Operating and Storage Temperature Range,T 0.9 (Note 1c 1.6(Note 1a) for Single OperationPower Dissipation 2 Operation for DualPower Dissipation 30 - Pulsed (Note 1a)Drain Current - Continuous GSS 20Gate-Source Voltage DSS 30Drain-Source Voltage UnitsDFS6N303ParameterSymbol C unless otherwise noted = 25 Maximum RatingsMOSFET pin SO-8 -8SuperSOT SOT-223SO-8-6SuperSOTSOT-23 SOIC-16 Ideal for DC/DC design flexiGeneral purpose pinout for Schottky and MOSFET incorporated into single power DC buck, boost, synchronous, < 0.50 < 0.42 GSDS(ON 4.5055 GSDS(ON = 6 Features General Description MOSFET with Schottky Diode DFS6N303
