FDFS2P102A ,Integrated P-Channel PowerTrench MOSFET and Schottky DiodeFeatures The FDFS2P102A combines the exceptional • –3.3 A, –20V R = 125 mΩ @ V = –10 V DS(ON) GSpe ..
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FDFS2P102A
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFS2P102A August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional • –3.3 A, –20V R = 125 mΩ @ V = –10 V DS(ON) GS performance of Fairchild's PowerTrench MOSFET R = 200 mΩ @ V = –4.5 V DS(ON) GS technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. • V < 0.39 V @ 1 A (T = 125°C) J F V < 0.47 V @ 1 A F This device is designed specifically as a single package solution for DC to DC converters. It features a fast V < 0.58 V @ 2 A F switching, low gate charge MOSFET with very low on- state resistance. The independently connected • Schottky and MOSFET incorporated into single Schottky diode allows its use in a variety of DC/DC converter topologies. power surface mount SO-8 package • Electrically independent Schottky and MOSFET pinout for design flexibility D D 1 8 A C C C 2 7 A C 3 6 S D G SO-8 S G 4 5 D A Pin 1 A o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V MOSFET Drain-Source Voltage V DSS –20 V MOSFET Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) A D –3.3 – Pulsed –10 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range °C J STG –55 to +150 V Schottky Repetitive Peak Reverse Voltage 20 V RRM I Schottky Average Forward Current (Note 1a) 1 A O Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDFS2P102A FDFS2P102A 13’’ 12mm 2500 units FDFS2P102A Rev A1(W) 2001
