FDFS2P102A_NL ,Integrated P-Channel PowerTrench MOSFET and Schottky Diodefeatures a fast V < 0.58 V @ 2 A Fswitching, low gate charge MOSFET with very low on- state resist ..
FDFS2P106A ,Integrated 60V P-Channel PowerTrench MOSFET and Schottky DiodeFeatures The FDFS2P106A combines the exceptional • –3.0 A, –60V R = 110 mΩ @ V = –10 V DS(ON) GSp ..
FDFS2P753Z ,-30V Integrated P-Channel PowerTrench?MOSFET and Schottky Diodefeatures a fast switching, low gate Schottky and MOSFET incorporated into single power surface ch ..
FDFS6N303 ,FETKEY N-Channel MOSFET with Schottky DiodeFeatures General DescriptionMOSFET with Schottky Diode NFETKEYDFS6N303 oAMOSFET ELECTRICALV = ..
FDFS6N303_NL ,30V N-Channel MOSFET with Schottky DiodeFeatures General DescriptionMOSFET with Schottky Diode DFS6N303 oAMOSFET ELECTRICALV = VI V ..
FDFS6N548 ,30V Integrated N-Channel PowerTrench?MOSFET and Schottky Diodefeatures a fast switching, low gate Schottky and MOSFET incorporated into single power surface ch ..
FODM453V ,5-Pin MFP High Speed/High CMR Transistor Output OptocouplerAPPLICATIONS• Line receivers • Pulse transformer replacement• Output interface to CMOS-LSTTL-TTL• W ..
FP0705R2-R10-R , High Current, Low-Profile Power Inductors
FP0705R2-R12-R , High Current, Low-Profile Power Inductors
FP0705R2-R15-R , High Current, Low-Profile Power Inductors
FP0705R2-R18-R , High Current, Low-Profile Power Inductors
FP1007R1-R22-R , High Current, High Frequency, Power Inductors
FDFS2P102A_NL
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFS2P102A August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional • –3.3 A, –20V R = 125 mΩ @ V = –10 V DS(ON) GS performance of Fairchild's PowerTrench MOSFET R = 200 mΩ @ V = –4.5 V DS(ON) GS technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. • V < 0.39 V @ 1 A (T = 125°C) J F V < 0.47 V @ 1 A F This device is designed specifically as a single package solution for DC to DC converters. It features a fast V < 0.58 V @ 2 A F switching, low gate charge MOSFET with very low on- state resistance. The independently connected • Schottky and MOSFET incorporated into single Schottky diode allows its use in a variety of DC/DC converter topologies. power surface mount SO-8 package • Electrically independent Schottky and MOSFET pinout for design flexibility D D 1 8 A C C C 2 7 A C 3 6 S D G SO-8 S G 4 5 D A Pin 1 A o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V MOSFET Drain-Source Voltage V DSS –20 V MOSFET Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) A D –3.3 – Pulsed –10 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range °C J STG –55 to +150 V Schottky Repetitive Peak Reverse Voltage 20 V RRM I Schottky Average Forward Current (Note 1a) 1 A O Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDFS2P102A FDFS2P102A 13’’ 12mm 2500 units FDFS2P102A Rev A1(W) 2001
