FDFS2P102 ,Integrated P-Channel MOSFET and Schottky DiodeFeaturesThe FDFS2P102 combines the exceptional performance of –3.3 A, –20 V. R = 0.125 Ω @ V = –10 ..
FDFS2P102A ,Integrated P-Channel PowerTrench MOSFET and Schottky DiodeFeatures The FDFS2P102A combines the exceptional • –3.3 A, –20V R = 125 mΩ @ V = –10 V DS(ON) GSpe ..
FDFS2P102A_NL ,Integrated P-Channel PowerTrench MOSFET and Schottky Diodefeatures a fast V < 0.58 V @ 2 A Fswitching, low gate charge MOSFET with very low on- state resist ..
FDFS2P106A ,Integrated 60V P-Channel PowerTrench MOSFET and Schottky DiodeFeatures The FDFS2P106A combines the exceptional • –3.0 A, –60V R = 110 mΩ @ V = –10 V DS(ON) GSp ..
FDFS2P753Z ,-30V Integrated P-Channel PowerTrench?MOSFET and Schottky Diodefeatures a fast switching, low gate Schottky and MOSFET incorporated into single power surface ch ..
FDFS6N303 ,FETKEY N-Channel MOSFET with Schottky DiodeFeatures General DescriptionMOSFET with Schottky Diode NFETKEYDFS6N303 oAMOSFET ELECTRICALV = ..
fodm3063 ,600V 5mA Zero Crossing Triac, MFPApplications Solenoid/valve controls Lighting controlsStatic power switches AC motor drivesTemperat ..
FODM3082 ,4-Pin Full Pitch Mini-Flat Package Zero-Cross Triac Driver Output OptocouplersApplications Solenoid/valve controls Lighting controlsStatic power switches AC motor drivesTemperat ..
FODM453V ,5-Pin MFP High Speed/High CMR Transistor Output OptocouplerAPPLICATIONS• Line receivers • Pulse transformer replacement• Output interface to CMOS-LSTTL-TTL• W ..
FP0705R2-R10-R , High Current, Low-Profile Power Inductors
FP0705R2-R12-R , High Current, Low-Profile Power Inductors
FP0705R2-R15-R , High Current, Low-Profile Power Inductors
FDFS2P102
Integrated P-Channel MOSFET and Schottky Diode
FDFS2P102 October 2000 Integrated P-Channel MOSFET and Schottky Diode The FDFS2P102 combines the exceptional performance of–3.3 A, –20 V. R = 0.125 Ω @ V = –10 V DS(ON) GS Fairchild's high cell density MOSFET with a very low forward R = 0.200 Ω @ V = –4.5 V. DS(ON) GS voltage drop Schottky barrier rectifier in an SO-8 package. oV < 0.39 V @ 1 A (T = 125 C). F J V < 0.47 V @ 1 A. This device is designed specifically as a single package solution F for DC to DC converters. It features a fast switching, low gate V < 0.58 V @ 2 A. F charge MOSFET with very low on-state resistance. The Schottky and MOSFET incorporated into single power independently connected Schottky diode allows its use in a variety surface mount SO-8 package. of DC/DC converter topologies. Electrically independent Schottky and MOSFET pinout for design flexibility. • DC/DC converters Load Switch Motor Drives D D1 8AC C C 2 7AC 3 6SD G S G4 5DA Pin 1A o TA=25 C unless otherwise notedMOSFET Maximum Ratings SymbolParameterRatingsUnits V Drain-Source Voltage -20 V DSS ± V Gate-Source Voltage V GSS 20 (Note 1a) I Drain Current - Continuous -3.3 A D - Pulsed -20 P Power Dissipation for Dual Operation 2 W D (Note 1a) Power Dissipation for Single Operation 1.6 (Note 1b) 1 (Note 1c) 0.9 ° T , T Operating and Storage Temperature Range -55 to +150 J STG C o TA=25 C unless otherwise notedSchottky Diode Maximum Ratings V Repetitive Peak Reverse Voltage 20 V RRM (Note 1a) I Average Forward Current 1A O Package Marking and Ordering Information Device MarkingDeviceReel SizeTape WidthQuantity FDFS2P102 FDFS2P102 13 12mm 2500 units 2000 Fairchild Semiconductor International FDFS2P102 Rev. E Applications FeaturesGeneral Description FDFS2P102
