FDFS2P102 ,Integrated P-Channel MOSFET and Schottky DiodeFeaturesThe FDFS2P102 combines the exceptional performance of –3.3 A, –20 V. R = 0.125 Ω @ V = –10 ..
FDFS2P102A ,Integrated P-Channel PowerTrench MOSFET and Schottky DiodeFeatures The FDFS2P102A combines the exceptional • –3.3 A, –20V R = 125 mΩ @ V = –10 V DS(ON) GSpe ..
FDFS2P102A_NL ,Integrated P-Channel PowerTrench MOSFET and Schottky Diodefeatures a fast V < 0.58 V @ 2 A Fswitching, low gate charge MOSFET with very low on- state resist ..
FDFS2P106A ,Integrated 60V P-Channel PowerTrench MOSFET and Schottky DiodeFeatures The FDFS2P106A combines the exceptional • –3.0 A, –60V R = 110 mΩ @ V = –10 V DS(ON) GSp ..
FDFS2P753Z ,-30V Integrated P-Channel PowerTrench?MOSFET and Schottky Diodefeatures a fast switching, low gate Schottky and MOSFET incorporated into single power surface ch ..
FDFS6N303 ,FETKEY N-Channel MOSFET with Schottky DiodeFeatures General DescriptionMOSFET with Schottky Diode NFETKEYDFS6N303 oAMOSFET ELECTRICALV = ..
fodm3063 ,600V 5mA Zero Crossing Triac, MFPApplications Solenoid/valve controls Lighting controlsStatic power switches AC motor drivesTemperat ..
FODM3082 ,4-Pin Full Pitch Mini-Flat Package Zero-Cross Triac Driver Output OptocouplersApplications Solenoid/valve controls Lighting controlsStatic power switches AC motor drivesTemperat ..
FODM453V ,5-Pin MFP High Speed/High CMR Transistor Output OptocouplerAPPLICATIONS• Line receivers • Pulse transformer replacement• Output interface to CMOS-LSTTL-TTL• W ..
FP0705R2-R10-R , High Current, Low-Profile Power Inductors
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FP0705R2-R15-R , High Current, Low-Profile Power Inductors
FDFMA3N109
30V Integrated N-Channel PowerTrench甅OSFET and Schottky Diode
® FDFMA3N109 Integrated N-Channel PowerTrench MOSFET and Schottky Diode April 2008 FDFMA3N109 tm ® Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: This device is designed specifically as a single package • 2.9 A, 30 V R = 123 mΩ @ V = 4.5 V DS(ON) GS solution for a boost topology in cellular handset and R = 140 mΩ @ V = 3.0 V DS(ON) GS other ultra-portable applications. It features a MOSFET = 163 mΩ @ V = 2.5 V RDS(ON) GS with low input capacitance, total gate charge and on- Schottky: state resistance, and an independently connected • V < 0.46 V @ 500mA F schottky diode with low forward voltage and reverse • Low profile – 0.8 mm maximum – in the new package leakage current to maximize boost efficiency. MicroFET 2x2 mm The MicroFET 2x2 package offers exceptional thermal ) • HBM ESD protection level = 1.8kV typical (Note 3 performance for its physical size and is well suited to • RoHS Compliant switching and linear mode applications. PIN 1 A NC D 1 6 A K K D 2 5 NC G 3 D 4 S K G S MicroFET 2x2 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DS V Gate-Source Voltage ±12 V GS I Drain Current – Continuous (T = 25°C, V = 4.5V) 2.9 D C GS – Continuous (T = 25°C, V = 2.5V) 2.7 A C GS – Pulsed 10 P Power Dissipation for Single Operation (Note 1a) 1.5 D W Power Dissipation for Single Operation (Note 1b) 0.65 T , T Operating and Storage Temperature –55 to +150 J STG °C V Schottky Repetitive Peak Reverse Voltage 28 V RRM I Schottky Average Forward Current 1 A O Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 83 R θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 193 θJA °C/W Thermal Resistance, Junction-to-Ambient (Note 1c) 101 R θJA R Thermal Resistance, Junction-to-Ambient (Note 1d) 228 θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 109 FDFMA3N109 7’’ 8mm 3000 units FDFMA3N109 Rev B2 ©2008
