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FDFMA2P857
-20V Integrated P-Channel PowerTrench?MOSFET and Schottky Diode
® FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode March 2008 FDFMA2P857 ® Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20V, –3.0A, 120mΩ Features General Description This device is designed specifically as a single package solution MOSFET: for the battery charge switch in cellular handset and other ultra- Max r = 120mΩ at V = –4.5V, I = –3.0A DS(on) GS D portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage Max r = 160mΩ at V = –2.5V, I = –2.5A DS(on) GS D schottky diode for minimum conduction losses. Max r = 240mΩ at V = –1.8V, I = –1.0A DS(on) GS D The MicroFET 2x2 package offers exceptional thermal Schottky: performance for it’s physical size and is well suited to linear mode applications. V < 0.54V @ 1A F Low profile - 0.8 mm maximum - in the new pack- age MicroFET 2x2 mm RoHS Compliant Pin 1 D A NC A 6 C 1 G NC 5 2 4 D 3 S C S G MicroFET 2x2 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DSS V Gate to Source Voltage ±8 V GSS Drain Current -Continuous (Note 1a) –3 I A D -Pulsed –6 Power Dissipation (Note 1a) 1.4 P W D Power Dissipation (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG V Schottky Repetitive Peak Reverse Voltage 30 V RRM I Schottky Average Forward Current 1 A O Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 86 θJA R Thermal Resistance, Junction to Ambient (Note 1b) 173 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1c) 86 θJA R Thermal Resistance, Junction to Ambient (Note 1d) 140 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .857 FDFMA2P857 MicroFET 2x2 7’’ 8mm 3000 units 1 ©2008 FDFMA2P857 Rev.B1
