FDFMA2P853 ,-20V Integrated P-Channel PowerTrench?MOSFET and Schottky DiodeFeaturesThis device is designed specifically as a single package MOSFET:solution for the battery ch ..
FDFMA2P857 ,-20V Integrated P-Channel PowerTrench?MOSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Min Typ ..
FDFMA3N109 ,30V Integrated N-Channel PowerTrench甅OSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDFS2P102 ,Integrated P-Channel MOSFET and Schottky DiodeFeaturesThe FDFS2P102 combines the exceptional performance of –3.3 A, –20 V. R = 0.125 Ω @ V = –10 ..
FDFS2P102A ,Integrated P-Channel PowerTrench MOSFET and Schottky DiodeFeatures The FDFS2P102A combines the exceptional • –3.3 A, –20V R = 125 mΩ @ V = –10 V DS(ON) GSpe ..
FDFS2P102A_NL ,Integrated P-Channel PowerTrench MOSFET and Schottky Diodefeatures a fast V < 0.58 V @ 2 A Fswitching, low gate charge MOSFET with very low on- state resist ..
FODM3053R2 ,4-pin Full Pitch MFP 600V Random Phase Triac Driver Output Optocouplerfeatures greatly enhanced static dv/dt capability to ensure stable switching performance of inducti ..
FODM3062 ,4-Pin Full Pitch Mini-Flat Package Zero-Cross Triac Driver Output OptocouplersApplications Solenoid/valve controls Lighting controlsStatic power switches AC motor drivesTemperat ..
fodm3063 ,600V 5mA Zero Crossing Triac, MFPApplications Solenoid/valve controls Lighting controlsStatic power switches AC motor drivesTemperat ..
FODM3082 ,4-Pin Full Pitch Mini-Flat Package Zero-Cross Triac Driver Output OptocouplersApplications Solenoid/valve controls Lighting controlsStatic power switches AC motor drivesTemperat ..
FODM453V ,5-Pin MFP High Speed/High CMR Transistor Output OptocouplerAPPLICATIONS• Line receivers • Pulse transformer replacement• Output interface to CMOS-LSTTL-TTL• W ..
FP0705R2-R10-R , High Current, Low-Profile Power Inductors
FDFMA2P853
-20V Integrated P-Channel PowerTrench?MOSFET and Schottky Diode
FDFMA2P853 Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
FDFMA2P853
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
General Description FeaturesThis device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
The MicroFET 2x2 package offers exceptional thermal
perfo rmance for it's physica
mode applications.
MOSFET: -3.0 A, -20V. RDS(ON) = 120 m: @ VGS = -4.5 V
RDS(ON) = 160 m: @ VGS = -2.5 V
RDS(ON) = 240 m: @ VGS = -1.8 V
Schottky:VF < 0.46 V @ 500 mA Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm RoHS Compliant
Absolute Maximum Ratings TA= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings UnitsVDSS MOSFET Drain-Source Voltage -20 V
VGSS MOSFET Gate-Source Voltage r8V Drain Current -Continuous (Note 1a)
-Pulsed
-3.0 A-6
VRRM Schottky Repetitive Peak Reverse voltage 30V Schottky Average Forward Current (Note 1a) 1 A Power dissipation for Single Operation (Note 1a)
Power dissipation for Single Operation (Note 1b)
1.4 W0.7
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 oC
RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 C/WRTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173
RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 86
RTJA Thermal Resistance, Junction-to-Ambient (Note 1d) 140
Device Marking Device Reel Size Tape Width Quantity
September 2008
September 2008
