FDFMA2N028Z ,20V Integrated N-Channel PowerTrench?MOSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Min Typ ..
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FODM3053R2 ,4-pin Full Pitch MFP 600V Random Phase Triac Driver Output Optocouplerfeatures greatly enhanced static dv/dt capability to ensure stable switching performance of inducti ..
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FDFMA2N028Z
20V Integrated N-Channel PowerTrench?MOSFET and Schottky Diode
® FDFMA2N028Z Integrated N-Channel PowerTrench MOSFET and Schottky Diode March 2008 FDFMA2N028Z ® Integrated N-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.7A, 68mΩ Features General Description This device is designed specifically as a single package solution MOSFET for a boost topology in cellular handset and other ultra-portable Max r = 68mΩ at V = 4.5V, I = 3.7A DS(on) GS D applications. It features a MOSFET with low on-state resistance, Max r = 86mΩ at V = 2.5V, I = 3.3A and an independently connected schottky diode with low forward DS(on) GS D voltage. HBM ESD protection level > 2kV (Note 3) The MicroFET 2x2 package offers exceptional thermal Schottky performance for its physical size and is well suited to switching and linear mode applications. V < 0.37V @ 500mA F Low profile - 0.8 mm maximum - in the new package MicroFET Application 2x2 mm DC - DC Conversion RoHS Compliant Pin 1 D A NC 6 C A 1 5 NC 2 G 4 3 D S C S G MicroFET 2X2 MOSFET Maximum Ratings T = 25°C unless otherwise noted J Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage ±12 V GS Drain Current -Continuous (Note 1a) 3.7 I A D -Pulsed 6 Power Dissipation (Note 1a) 1.4 P W D Power Dissipation (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG V Schottky Repetitive Peak Reverse Voltage 20 V RR I Schottky Average Forward Current 2 A O Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 86 θJA R Thermal Resistance, Junction to Ambient (Note 1b) 173 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1c) 86 θJA R Thermal Resistance, Junction to Ambient (Note 1d) 140 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .N28 FDFMA2N028Z MicroFET 2X2 7’’ 8mm 3000 units ©2008 1 FDFMA2N028Z Rev.B1
