FDFM2P110 ,Integrated P-Channel PowerTrench MOSFET and Schottky DiodeApplicationscharge MOSFET with very low on-state resistance. DC-DC ConverterPin 11 62 53 4Top Botto ..
FDFM2P110 ,Integrated P-Channel PowerTrench MOSFET and Schottky DiodeGeneral Description –3.5 A, –20 V R = 140 mΩ @ V = –4.5 V FDFM2P110 combines the exceptional perfo ..
FDFMA2N028Z ,20V Integrated N-Channel PowerTrench?MOSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Min Typ ..
FDFMA2P853 ,-20V Integrated P-Channel PowerTrench?MOSFET and Schottky DiodeFeaturesThis device is designed specifically as a single package MOSFET:solution for the battery ch ..
FDFMA2P857 ,-20V Integrated P-Channel PowerTrench?MOSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Min Typ ..
FDFMA3N109 ,30V Integrated N-Channel PowerTrench甅OSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FODM3052_NF098 ,600V Random Phase Triac Driver 10mAApplicationsmini-flat package. The lead pitch is 2.54mm. They are Industrial controlsdesigned for in ..
FODM3053 ,4-pin Full Pitch MFP 600V Random Phase Triac Driver Output Optocoupler 4-PIN FULL PITCH MINI-FLAT PACKAGERANDOM PHASE TRIAC DRI ..
FODM3053_NF098 ,600V Random Phase Triac Driver 5mAApplicationsmini-flat package. The lead pitch is 2.54mm. They are Industrial controlsdesigned for in ..
FODM3053R2 ,4-pin Full Pitch MFP 600V Random Phase Triac Driver Output Optocouplerfeatures greatly enhanced static dv/dt capability to ensure stable switching performance of inducti ..
FODM3062 ,4-Pin Full Pitch Mini-Flat Package Zero-Cross Triac Driver Output OptocouplersApplications Solenoid/valve controls Lighting controlsStatic power switches AC motor drivesTemperat ..
fodm3063 ,600V 5mA Zero Crossing Triac, MFPApplications Solenoid/valve controls Lighting controlsStatic power switches AC motor drivesTemperat ..
FDFM2P110
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
® FDFM2P110 Integrated P-Channel PowerTrench MOSFET and Schottky Diode April 2005 FDFM2P110 ® Integrated P-Channel PowerTrench MOSFET and Schottky Diode Features General Description ■ –3.5 A, –20 V R = 140 mΩ @ V = –4.5 V FDFM2P110 combines the exceptional performance of Fairchild’s DS(ON) GS R = 200 mΩ @ V = –2.5 V PowerTrench MOSFET technology with a very low forward voltage DS(ON) GS drop Schottky barrier rectifier in a MicroFET package. ■ Low Profile – 0.8mm maximum – in the new package MicroFET 3x3 mm This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate Applications charge MOSFET with very low on-state resistance. ■ DC-DC Converter Pin 1 1 6 2 5 3 4 Top Bottom MLP 3x3 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) –3.5 A D – Pulsed –10 V Schottky Repetitive Peak Reverse Voltage 20 V RRM I Schottky Average Forward Current (Note 1a) 2 A O P Power Dissipation (Steady State) (Note 1a) 2.4 W D (Note 1b) 1.2 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 60 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 145 θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2P110 FDFM2P110 7" 12mm 3000 units ©2005 1 FDFM2P110 Rev. C2
