FDD8882 ,30V N-Channel PowerTrench MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to! r = 11.5mΩ , V = 10V, I ..
FDD8896 ,30V N-Channel PowerTrenchMOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 5.7mΩ , V = 10V, I = 35ADS(ON) ..
FDD8896_NL ,30V N-Channel PowerTrenchMOSFETApplications High power and current handling capability• DC/DC convertersDDGGI-PAKS(TO-251AA)D-PAK ..
FDFC2P100 , Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm
FDFC3N108 ,20V N-Channel 1.8V Specified PowerTrench MOSFET with Schottky DiodeElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDFM2N111 ,Integrated N-Channel PowerTrench MOSFET and Schottky Diodefeatures a fast switching, low gate charge MOSFET with very low on-state R ..
FODM2705 ,4-Pin Full Pitch MFP AC Input Phototransistor Output OptocouplerApplications More than 5mm creepage/clearance Digital logic inputs Microprocessor inputsCompact 4 ..
FODM3011_NF098 ,4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output OptocouplersApplicationsmini-flat package. The lead pitch is 2.54mm. They are Industrial controlsdesigned for in ..
FODM3012_NF098 ,250V Random Phase Triac Driver 5mAApplicationsmini-flat package. The lead pitch is 2.54mm. They are Industrial controlsdesigned for in ..
FODM3021R1 ,4-pin Full Pitch MFP 400V Random Phase Triac Driver Output OptocouplerAPPLICATIONS 0.094 (2.39)• Industrial controls • Solenoid/valve controls 0.079 (2.01)• Traffic ligh ..
FODM3022 ,4-pin Full Pitch MFP 400V Random Phase Triac Driver Output Optocoupler 4-PIN FULL PITCH MINI-FLAT PACKAGERANDOM-PHASE TRIAC DRI ..
FODM3022_NF098 ,400V Random Phase Triac Driver 10mAApplicationsmini-flat package. The lead pitch is 2.54mm. They are Industrial controlsdesigned for in ..
FDD8882-FDU8882
30V N-Channel PowerTrench MOSFET
FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET November 2004 FDD8882 / FDU8882 ® N-Channel PowerTrench MOSFET 30V, 55A, 11.5mΩ Features General Description This N-Channel MOSFET has been designed specifically to ! r = 11.5mΩ, V = 10V, I = 35A DS(ON) GS D improve the overall efficiency of DC/DC converters using ! r = 15mΩ, V = 4.5V, I = 35A DS(ON) GS D either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low ! High performance trench technology for extremely low r and fast switching speed. DS(ON) r DS(ON) ! Low gate charge ! High power and current handling capability Application ! DC/DC converters D D G G I-PAK S (TO-251AA) D-PAK TO-252 S G DS (TO-252) ©2004 1 FDD8882/FDU8882 Rev. 1.0.0
