FDD8880 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 9mΩ , V = 10V, I = 35ADS(ON) G ..
FDD8880_NL ,30V N-Channel PowerTrench MOSFETApplications High power and current handling capability• DC/DC convertersDDGGSD-PAKTO-252 S(TO-252 ..
FDD8882 ,30V N-Channel PowerTrench MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to! r = 11.5mΩ , V = 10V, I ..
FDD8896 ,30V N-Channel PowerTrenchMOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 5.7mΩ , V = 10V, I = 35ADS(ON) ..
FDD8896_NL ,30V N-Channel PowerTrenchMOSFETApplications High power and current handling capability• DC/DC convertersDDGGI-PAKS(TO-251AA)D-PAK ..
FDFC2P100 , Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm
FODM124 ,4-pin Full Pitch MFP Phototransistor Output OptocouplerApplications More than 5mm creepage/clearance Digital logic inputs Microprocessor inputsCompact 4 ..
FODM124 ,4-pin Full Pitch MFP Phototransistor Output OptocouplerElectrical Characteristics AIndividual Component CharacteristicsSymbol Parameter Test Conditions De ..
FODM2705 ,4-Pin Full Pitch MFP AC Input Phototransistor Output OptocouplerApplications More than 5mm creepage/clearance Digital logic inputs Microprocessor inputsCompact 4 ..
FODM3011_NF098 ,4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output OptocouplersApplicationsmini-flat package. The lead pitch is 2.54mm. They are Industrial controlsdesigned for in ..
FODM3012_NF098 ,250V Random Phase Triac Driver 5mAApplicationsmini-flat package. The lead pitch is 2.54mm. They are Industrial controlsdesigned for in ..
FODM3021R1 ,4-pin Full Pitch MFP 400V Random Phase Triac Driver Output OptocouplerAPPLICATIONS 0.094 (2.39)• Industrial controls • Solenoid/valve controls 0.079 (2.01)• Traffic ligh ..
FDD8880-FDD8880_NL
30V N-Channel PowerTrench MOSFET
FDD8880 November 2004 FDD8880 ® N-Channel PowerTrench MOSFET 30V, 58A, 9mΩ General Description Features This N-Channel MOSFET has been designed specifically to r = 9mΩ, V = 10V, I = 35A DS(ON) GS D improve the overall efficiency of DC/DC converters using r = 12mΩ, V = 4.5V, I = 35A either synchronous or conventional switching PWM DS(ON) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(ON) r DS(ON) Low gate charge Applications High power and current handling capability • DC/DC converters D D G G S D-PAK TO-252 S (TO-252) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 58 A Continuous (T = 25 C, V = 10V) (Note 1) C GS o I Continuous (T = 25 C, V = 4.5V) (Note 1) 51 A D C GS o o Continuous (T = 25 C, V = 10V, with R = 52 C/W) 13 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 2) 53 mJ AS Power dissipation 55 W P D o o Derate above 25C0.37W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252 2.73 C/W θJC o R Thermal Resistance Junction to Ambient TO-252 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8880 FDD8880 TO-252AA 13” 12mm 2500 units FDD8880 FDD8880_NL (Note 3) TO-252AA 13” 12mm 2500 units ©2004 FDD8880 Rev. B2
