FDD8878 ,30V N-Channel PowerTrench MOSFETApplications
FDD8878-FDD8878_NL-FDU8878
30V N-Channel PowerTrench MOSFET
® FDD8878 / FDU8878 N-Channel PowerTrench MOSFET January 2005 FDD8878 / FDU8878 ® N-Channel PowerTrench MOSFET 30V, 40A, 15mΩ Features General Description r = 15mΩ, V = 10V, I = 35A This N-Channel MOSFET has been designed specifically to DS(ON) GS D improve the overall efficiency of DC/DC converters using r = 18.5mΩ, V = 4.5V, I = 35A either synchronous or conventional switching PWM DS(ON) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(ON) r DS(ON) Low gate charge High power and current handling capability Applications DC/DC converters D D G G I-PAK S (TO-251AA) D-PAK TO-252 S G DS (TO-252) ©2005 1 FDD8878 / FDU8878 Rev. A3
