FDD8796 ,25V N-Channel PowerTrench?MOSFETNOITAT®FDD8796/FDU8796 N-Channel PowerTrench MOSFETNEMELMPIEEMarch 2006FDD8796/FDU8796 ..
FDD8870 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 3.9mΩ , V = 10V, I = 35ADS(ON) ..
FDD8874 ,30V N-Channel PowerTrench MOSFETFDD8874 / FDU8874November 2004FDD8874 / FDU8874®N-Channel PowerTrench MOSFET30V, 116A, 5.1mΩGeneral ..
FDD8876 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 8.2mΩ , V = 10V, I = 35ADS(ON) ..
FDD8876 ,30V N-Channel PowerTrench MOSFETApplications High power and current handling capability• DC/DC convertersDDGGI-PAKS(TO-251AA)D-PAK ..
FDD8876 ,30V N-Channel PowerTrench MOSFETApplications High power and current handling capability• DC/DC convertersDDGGI-PAKS(TO-251AA)D-PAK ..
FOD852 ,4-Pin DIP Photodarlington Output OptocouplerBlock DiagramANODE 1 4 COLLECTOR4CATHODE 2 3 EMITTER12006 Fairchild Semiconductor Corporation FOD85 ..
FOD852300W , 4-Pin High Operating Temperature Photodarlington Optocoupler
FODM124 ,4-pin Full Pitch MFP Phototransistor Output OptocouplerApplications More than 5mm creepage/clearance Digital logic inputs Microprocessor inputsCompact 4 ..
FODM124 ,4-pin Full Pitch MFP Phototransistor Output OptocouplerElectrical Characteristics AIndividual Component CharacteristicsSymbol Parameter Test Conditions De ..
FODM2705 ,4-Pin Full Pitch MFP AC Input Phototransistor Output OptocouplerApplications More than 5mm creepage/clearance Digital logic inputs Microprocessor inputsCompact 4 ..
FODM3011_NF098 ,4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output OptocouplersApplicationsmini-flat package. The lead pitch is 2.54mm. They are Industrial controlsdesigned for in ..
FDD8796
25V N-Channel PowerTrench?MOSFET
N O I T A T ® FDD8796/FDU8796 N-Channel PowerTrench MOSFET N E M E L MP I E E March 2006 FDD8796/FDU8796 ® N-Channel PowerTrench MOSFET 25V, 35A, 5.7mΩ General Description Features Max r = 5.7mΩ at V = 10V, I = 35A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency of DC/DC converters using Max r = 8.0mΩ at V = 4.5V, I = 35A DS(on) GS D either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge: Q = 37nC(Typ), V = 10V g(10) GS r and fast switching speed. DS(on) Low gate resistance Avalanche rated and 100% tested Application RoHS Compliant Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D G D G S I-PAK G DS Short Lead I-PAK (TO-251AA) S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package Limited) 35 I -Continuous (Die Limited) 98 A D -Pulsed (Note 1) 305 E Single Pulse Avalanche Energy (Note 2) 91 mJ AS P Power Dissipation 88 W D T , T Operating and Storage Temperature -55 to 175 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case TO_252, TO_251 1.7 °C/W θJC R Thermal Resistance, Junction to Ambient TO_252, TO_251 100 °C/W θJA 2 R Thermal Resistance, Junction to Ambient TO-252,1in copper pad area 52 °C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8796 FDD8796 TO-252AA 13’’ 12mm 2500 units FDU8796 FDU8796 TO-251AA N/A (Tube) N/A 75 units FDU8796 FDU8796_F071 TO-251AA N/A (Tube) N/A 75 units ©2006 1 FDD8796/FDU8796 Rev. B R F D A E L
