FDD8782 ,25V N-Channel PowerTrench?MOSFETFeatures Max r = 11.0mΩ at V = 10V, I = 35AThis N-Channel MOSFET has been designed specifically DS ..
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FDD8870 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 3.9mΩ , V = 10V, I = 35ADS(ON) ..
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FDD8782
25V N-Channel PowerTrench?MOSFET
® FDD8782/FDU8782 N-Channel PowerTrench MOSFET November 2009 FDD8782/FDU8782 ® N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description Features Max r = 11.0mΩ at V = 10V, I = 35A This N-Channel MOSFET has been designed specifically DS(on) GS D to improve the overall efficiency of DC/DC converters using Max r = 14.0mΩ at V = 4.5V, I = 35A DS(on) GS D either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge: Q = 18nC(Typ), V = 10V g(10) GS r and fast switching speed. DS(on) Low gate resistance Avalanche rated and 100% tested Application RoHS Compliant Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D G D G S I-PAK G DS Short Lead I-PAK (TO-251AA) S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package Limited) 35 I -Continuous (Die Limited) 54 A D -Pulsed (Note 1) 321 E Single Pulse Avalanche Energy (Note 2) 72 mJ AS P Power Dissipation 50 W D T , T Operating and Storage Temperature -55 to 175 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case TO-252,TO-251 3.0 °C/W θJC R Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W θJA 2 R Thermal Resistance, Junction to Ambient TO-252,1in copper pad area 52 °C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8782 FDD8782 TO-252AA 13’’ 12mm 2500 units FDU8782 FDU8782 TO-251AA N/A(Tube) N/A 75 units FDU8782 FDU8782_F071 TO-251AA N/A(Tube) N/A 75 units ©2009 1 FDD8782/FDU8782 Rev. A1
