FDD8778 ,25V N-Channel PowerTrench?MOSFETGeneral Description Max r = 14.0mΩ at V = 10V, I = 35AThis N-Channel MOSFET has been designed spec ..
FDD8778 ,25V N-Channel PowerTrench?MOSFETNOITAT®FDD8778/FDU8778 N-Channel PowerTrench MOSFETNEMELMPIEEMay 2006FDD8778/FDU8778 ..
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FDD8782 ,25V N-Channel PowerTrench?MOSFETFeatures Max r = 11.0mΩ at V = 10V, I = 35AThis N-Channel MOSFET has been designed specifically DS ..
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FOD817C300 ,4-Pin DIP Phototransistor Output OptocouplerFEATURES• Applicable to Pb-free IR reflow soldering• Compact 4-pin package1• Current transfer ratio ..
FOD817C300 ,4-Pin DIP Phototransistor Output Optocoupler 4-PIN PHOTOTRANSISTOR OPTOCOUPLERSFOD817 SeriesDESCRI ..
FOD817D300 ,4-Pin DIP Phototransistor Output Optocoupler 4-PIN PHOTOTRANSISTOR OPTOCOUPLERSFOD817 SeriesDESCRI ..
FOD817D3SD ,4-Pin DIP Phototransistor Output OptocouplerBLOCK DIAGRAMFOD817C: 200-400%FOD817D: 300-600%• C-UL, UL and VDE approved• High input-output isola ..
FOD817DSD ,4-Pin DIP Phototransistor Output OptocouplerAPPLICATIONS CATHODE 2 3 EMITTERFOD817 Series•Power supply regulators• Digital logic inputs• Microp ..
FOD817SD ,4-Pin DIP Phototransistor Output OptocouplerAPPLICATIONS CATHODE 2 3 EMITTERFOD817 Series•Power supply regulators• Digital logic inputs• Microp ..
FDD8778
25V N-Channel PowerTrench?MOSFET
N O I T A T ® FDD8778/FDU8778 N-Channel PowerTrench MOSFET N E M E L MP I E E May 2006 FDD8778/FDU8778 tm ® N-Channel PowerTrench MOSFET 25V, 35A, 14mΩ Features General Description Max r = 14.0mΩ at V = 10V, I = 35A This N-Channel MOSFET has been designed specifically DS(on) GS D to improve the overall efficiency of DC/DC converters using Max r = 21.0mΩ at V = 4.5V, I = 33A DS(on) GS D either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge: Q = 12.6nC(Typ), V = 10V g(TOT) GS r and fast switching speed. DS(on) Low gate resistance RoHS compliant Application DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D G D G S I-PAK G DS Short Lead I-PAK (TO-251AA) S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package Limited) 35 I -Continuous (Die Limited) 40 A D -Pulsed (Note 1) 145 E Single Pulse Avalanche Energy (Note 2) 24 mJ AS P Power Dissipation 39 W D T , T Operating and Storage Temperature -55 to 175 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case TO-252,TO-251 3.8 °C/W θJC R Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W θJA 2 R Thermal Resistance, Junction to Ambient TO-252,1in copper pad area 52 °C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8778 FDD8778 TO-252AA 13’’ 12mm 2500 units FDU8778 FDU8778 TO-251AA N/A(Tube) N/A 75 units FDU8778 FDU8778_F071 TO-251AA N/A(Tube) N/A 75 units ©2006 1 FDD8778/FDU8778 Rev. A R F D A E L
