FDD86102 ,100V N-Channel PowerTrench?MOSFETApplicationsurface mount package DC - DC Conversion Very low Qg and Qgd compared to competing tre ..
FDD86102 ,100V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 24 m at V = 10 ..
FDD8770 ,25V N-Channel PowerTrench? MOSFETNOITAT®FDD8770/FDU8770 N-Channel PowerTrench MOSFETNEMELMPIEEMarch 2006FDD8770/FDU8770 ..
FDD8778 ,25V N-Channel PowerTrench?MOSFETGeneral Description Max r = 14.0mΩ at V = 10V, I = 35AThis N-Channel MOSFET has been designed spec ..
FDD8778 ,25V N-Channel PowerTrench?MOSFETNOITAT®FDD8778/FDU8778 N-Channel PowerTrench MOSFETNEMELMPIEEMay 2006FDD8778/FDU8778 ..
FDD8780 ,25V N-Channel PowerTrench?MOSFETNOITAT®FDD8780/FDU8780 N-Channel PowerTrench MOSFETNEMELMPIEEMarch 2006FDD8780/FDU8780 ..
FOD817B ,4-Pin DIP Phototransistor Output OptocouplerFEATURES• Applicable to Pb-free IR reflow soldering• Compact 4-pin package1• Current transfer ratio ..
FOD817B300 ,4-Pin DIP Phototransistor Output OptocouplerBLOCK DIAGRAMFOD817C: 200-400%FOD817D: 300-600%• C-UL, UL and VDE approved• High input-output isola ..
FOD817BS ,4-Pin DIP Phototransistor Output OptocouplerAPPLICATIONS CATHODE 2 3 EMITTERFOD817 Series•Power supply regulators• Digital logic inputs• Microp ..
FOD817C ,4-Pin DIP Phototransistor Output OptocouplerAPPLICATIONS CATHODE 2 3 EMITTERFOD817 Series•Power supply regulators• Digital logic inputs• Microp ..
FOD817C ,4-Pin DIP Phototransistor Output OptocouplerAPPLICATIONS CATHODE 2 3 EMITTERFOD817 Series•Power supply regulators• Digital logic inputs• Microp ..
FOD817C300 ,4-Pin DIP Phototransistor Output Optocoupler 4-PIN PHOTOTRANSISTOR OPTOCOUPLERSFOD817 SeriesDESCRI ..
FDD86102
100V N-Channel PowerTrench?MOSFET
® FDD86102 N-Channel PowerTrench MOSFET December 2012 FDD86102 ® � N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m� Features General Description This N-Channel MOSFET is produced using Fairchild � Max r = 24 m� at V = 10 V, I = 8 A DS(on) GS D ® Semiconductor‘s advanced Power Trench process that has � Max r = 38 m� at V = 6 V, I = 6 A DS(on) GS D been optimized for r , switching performance and DS(on) ruggedness. � High performance trench technology for extremely low r DS(on) � High power and current handling capability in a widely used Application surface mount package � DC - DC Conversion � Very low Qg and Qgd compared to competing trench technologies � Fast switching speed � 100% UIL tested � RoHS Compliant D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings T = 25 °C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25 °C 36 C I -Continuous T = 25 °C (Note 1a) 8 A D A -Pulsed (Note 4) 75 E Single Pulse Avalanche Energy (Note 3) 121 mJ AS Power Dissipation T = 25 °C 62 C P W D Power Dissipation T = 25 °C (Note 1a) 3.1 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.0 �JC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 �JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD86102 FDD86102 D-PAK(TO-252) 13 ’’ 12 mm 2500 units 1 ©2012 FDD86102 Rev.C6
