FDD8586 ,N-Channel PowerTrench® MOSFET 20V, 35A, 5.5mOhmsGeneral Description Max r = 5.5mΩ at V = 10V, I = 35AThis N-Channel MOSFET has been designed speci ..
FDD86102 ,100V N-Channel PowerTrench?MOSFETApplicationsurface mount package DC - DC Conversion Very low Qg and Qgd compared to competing tre ..
FDD86102 ,100V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 24 m at V = 10 ..
FDD8770 ,25V N-Channel PowerTrench? MOSFETNOITAT®FDD8770/FDU8770 N-Channel PowerTrench MOSFETNEMELMPIEEMarch 2006FDD8770/FDU8770 ..
FDD8778 ,25V N-Channel PowerTrench?MOSFETGeneral Description Max r = 14.0mΩ at V = 10V, I = 35AThis N-Channel MOSFET has been designed spec ..
FDD8778 ,25V N-Channel PowerTrench?MOSFETNOITAT®FDD8778/FDU8778 N-Channel PowerTrench MOSFETNEMELMPIEEMay 2006FDD8778/FDU8778 ..
FOD817B ,4-Pin DIP Phototransistor Output OptocouplerFEATURES• Applicable to Pb-free IR reflow soldering• Compact 4-pin package1• Current transfer ratio ..
FOD817B300 ,4-Pin DIP Phototransistor Output OptocouplerBLOCK DIAGRAMFOD817C: 200-400%FOD817D: 300-600%• C-UL, UL and VDE approved• High input-output isola ..
FOD817BS ,4-Pin DIP Phototransistor Output OptocouplerAPPLICATIONS CATHODE 2 3 EMITTERFOD817 Series•Power supply regulators• Digital logic inputs• Microp ..
FOD817C ,4-Pin DIP Phototransistor Output OptocouplerAPPLICATIONS CATHODE 2 3 EMITTERFOD817 Series•Power supply regulators• Digital logic inputs• Microp ..
FOD817C ,4-Pin DIP Phototransistor Output OptocouplerAPPLICATIONS CATHODE 2 3 EMITTERFOD817 Series•Power supply regulators• Digital logic inputs• Microp ..
FOD817C300 ,4-Pin DIP Phototransistor Output Optocoupler 4-PIN PHOTOTRANSISTOR OPTOCOUPLERSFOD817 SeriesDESCRI ..
FDD8586
N-Channel PowerTrench® MOSFET 20V, 35A, 5.5mOhms
® FDD8586/FDU8586 N-Channel PowerTrench MOSFET January 2007 FDD8586/FDU8586 tm ® N-Channel PowerTrench MOSFET 20V, 35A, 5.5mΩ Features General Description Max r = 5.5mΩ at V = 10V, I = 35A This N-Channel MOSFET has been designed specifically DS(on) GS D to improve the overall efficiency of DC/DC converters using Max r = 8.5mΩ at V = 4.5V, I = 33A DS(on) GS D either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge: Q = 34nC(Typ), V = 10V g(TOT) GS r and fast switching speed. DS(on) Low gate resistance Application 100% Avalanche tested Vcore DC-DC for Desktop Computers and Servers RoHS compliant VRM for Intermediate Bus Architecture D G I-PAK G DS (TO-251AA) S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package Limited) 35 I -Continuous (Die Limited) 93 A D -Pulsed (Note 1) 354 E Single Pulse Avalanche Energy (Note 2) 144 mJ AS P Power Dissipation 77 W D T , T Operating and Storage Temperature -55 to 175 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case TO-252,TO-251 1.94 °C/W θJC R Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W θJA 2 R Thermal Resistance, Junction to Ambient TO-252,1in copper pad area 52 °C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8586 FDD8586 TO-252AA 13’’ 12mm 2500 units FDU8586 FDU8586 TO-251AA N/A(Tube) N/A 75 units ©2007 1 FDD8586/FDU8586 Rev. B
