FDD8451 ,40V N-Channel PowerTrench?MOSFETNOITAT®FDD8451 N-Channel PowerTrench MOSFETNEMELMPIEEMay 2009FDD8451tm®N-Channel PowerTrench MOSFET ..
FDD8580 ,N-Channel PowerTrench® MOSFET 20V, 35A, 9mOhmsGeneral DescriptionThis N-Channel MOSFET has been designed specifically Max r = 9mΩ at V = 10V, I ..
FDD8586 ,N-Channel PowerTrench® MOSFET 20V, 35A, 5.5mOhmsGeneral Description Max r = 5.5mΩ at V = 10V, I = 35AThis N-Channel MOSFET has been designed speci ..
FDD86102 ,100V N-Channel PowerTrench?MOSFETApplicationsurface mount package DC - DC Conversion Very low Qg and Qgd compared to competing tre ..
FDD86102 ,100V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 24 m at V = 10 ..
FDD8770 ,25V N-Channel PowerTrench? MOSFETNOITAT®FDD8770/FDU8770 N-Channel PowerTrench MOSFETNEMELMPIEEMarch 2006FDD8770/FDU8770 ..
FOD817A300 ,4-Pin DIP Phototransistor Output OptocouplerFEATURES• Applicable to Pb-free IR reflow soldering• Compact 4-pin package1• Current transfer ratio ..
FOD817A300W ,4-Pin DIP Phototransistor Output Optocoupler 4-PIN PHOTOTRANSISTOR OPTOCOUPLERSFOD817 SeriesDESCRI ..
FOD817AS ,4-Pin DIP Phototransistor Output OptocouplerAPPLICATIONS CATHODE 2 3 EMITTERFOD817 Series•Power supply regulators• Digital logic inputs• Microp ..
FOD817ASD ,4-Pin DIP Phototransistor Output Optocoupler 4-PIN PHOTOTRANSISTOR OPTOCOUPLERSFOD817 SeriesDESCRI ..
FOD817B ,4-Pin DIP Phototransistor Output OptocouplerFEATURES• Applicable to Pb-free IR reflow soldering• Compact 4-pin package1• Current transfer ratio ..
FOD817B300 ,4-Pin DIP Phototransistor Output OptocouplerBLOCK DIAGRAMFOD817C: 200-400%FOD817D: 300-600%• C-UL, UL and VDE approved• High input-output isola ..
FDD8451
40V N-Channel PowerTrench?MOSFET
N O I T A T ® FDD8451 N-Channel PowerTrench MOSFET N E M E L MP I E E May 2009 FDD8451 tm ® N-Channel PowerTrench MOSFET 40V, 28A, 24m: Features General Description Max r 24m: at V = 10V, I = 9A This N-Channel MOSFET has been designed specifically DS(on) GS D to improve the overall efficiency of DC/DC converters using Max r 30m: at V = 4.5V, I = 7A either synchronous or conventional switching PWM DS(on) GS D controllers. It has been optimized for low gate charge, fast Low gate charge switching speed and extremely low r . DS(on) Fast Switching Application High performance trench technology for extremely low DC/DC converter r DS(on) Backlight inverter RoHS compliant D G S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous@T =25°C 28 C I -Continuous @T =25°C (Note 1a) 9 A D A -Pulsed 78 E Single Pulse Avalanche Energy (Note 3)20 mJ AS P Power Dissipation 30 W D T , T Operating and Storage Temperature -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.1 °C/W TJC R Thermal Resistance, Junction to Ambient (Note 1a) 40 °C/W TJA R Thermal Resistance, Junction to Ambient (Note 1b) 96 °C/W TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8451 FDD8451 D-PAK(TO-252) 13’’ 12mm 2500 units ©2009 1 FDD8451 Rev. B2 R F D A E L
