FDD8447L ,40V N-Channel PowerTrench?MOSFETGeneral Description Max r = 8.5mΩ at V = 10V, I = 14AThis N-Channel MOSFET has been produced using ..
FDD8451 ,40V N-Channel PowerTrench?MOSFETNOITAT®FDD8451 N-Channel PowerTrench MOSFETNEMELMPIEEMay 2009FDD8451tm®N-Channel PowerTrench MOSFET ..
FDD8580 ,N-Channel PowerTrench® MOSFET 20V, 35A, 9mOhmsGeneral DescriptionThis N-Channel MOSFET has been designed specifically Max r = 9mΩ at V = 10V, I ..
FDD8586 ,N-Channel PowerTrench® MOSFET 20V, 35A, 5.5mOhmsGeneral Description Max r = 5.5mΩ at V = 10V, I = 35AThis N-Channel MOSFET has been designed speci ..
FDD86102 ,100V N-Channel PowerTrench?MOSFETApplicationsurface mount package DC - DC Conversion Very low Qg and Qgd compared to competing tre ..
FDD86102 ,100V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 24 m at V = 10 ..
FOD817A ,4-Pin DIP Phototransistor Output OptocouplerFEATURES• Applicable to Pb-free IR reflow soldering• Compact 4-pin package1• Current transfer ratio ..
FOD817A ,4-Pin DIP Phototransistor Output OptocouplerBLOCK DIAGRAMFOD817C: 200-400%FOD817D: 300-600%• C-UL, UL and VDE approved• High input-output isola ..
FOD817A300 ,4-Pin DIP Phototransistor Output OptocouplerFEATURES• Applicable to Pb-free IR reflow soldering• Compact 4-pin package1• Current transfer ratio ..
FOD817A300W ,4-Pin DIP Phototransistor Output Optocoupler 4-PIN PHOTOTRANSISTOR OPTOCOUPLERSFOD817 SeriesDESCRI ..
FOD817AS ,4-Pin DIP Phototransistor Output OptocouplerAPPLICATIONS CATHODE 2 3 EMITTERFOD817 Series•Power supply regulators• Digital logic inputs• Microp ..
FOD817ASD ,4-Pin DIP Phototransistor Output Optocoupler 4-PIN PHOTOTRANSISTOR OPTOCOUPLERSFOD817 SeriesDESCRI ..
FDD8447L
40V N-Channel PowerTrench?MOSFET
® FDD8447L 40V N-Channel PowerTrench MOSFET May 2008 FDD8447L ® 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description Max r = 8.5mΩ at V = 10V, I = 14A This N-Channel MOSFET has been produced using Fairchild DS(on) GS D ® Semiconductor’s proprietary PowerTrench technology to Max r = 11.0mΩ at V = 4.5V, I = 11A DS(on) GS D deliver low r and optimized BV capability to offer DS(on) DSS Fast Switching superior performance benefit in the application. RoHS Compliant Applications Inverter Power Supplies D D G G S D-PAK TO-252 S (TO-252) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 50 C -Continuous (Silicon limited) T = 25°C 57 C I A D -Continuous T = 25°C (Note 1a) 15.2 A -Pulsed 100 I Max Pulse Diode Current 100 A S E Drain-Source Avalanche Energy (Note 3) 153 mJ AS Power Dissipation T = 25°C 44 C P T = 25°C (Note 1a) 3.1 W D A T = 25°C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.8 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 θJA R Thermal Resistance, Junction to Ambient (Note 1b) 96 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8447L FDD8447L D-PAK(TO-252) 13’’ 12mm 2500 units 1 ©2008 FDD8447L Rev.C3
