FDD8424H ,40V Dual N & P-Channel PowerTrench?MOSFETGeneral DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are p ..
FDD8444 ,40V N-Channel PowerTrench?MOSFETFeatures Typ r = 4mΩ at V = 10V, I = 50A Automotive Engine ControlDS(on) GS D ..
FDD8444L , N-Channel PowerTrench® MOSFET
FDD8444L , N-Channel PowerTrench® MOSFET
FDD8445 ,40V N-Channel PowerTrench?MOSFETApplications R = 6.7 mΩ (Typ), V = 10V, I =50A Automotive Engine ControlDS(ON) GS D Q = 45nC (Ty ..
FDD8447L ,40V N-Channel PowerTrench?MOSFETGeneral Description Max r = 8.5mΩ at V = 10V, I = 14AThis N-Channel MOSFET has been produced using ..
FOD617B ,4-Pin High Operating Temperature Phototransistor OptocouplersBlock DiagramANODE, CATHODE 1 4 COLLECTOR1 4ANODE COLLECTORCATHODE, ANODE 2 3 EMITTER4CATHODE 2 3 E ..
FOD814A ,4-Pin DIP Phototransistor Output OptocouplerBlock DiagramANODE, CATHODE 1 4 COLLECTOR1 4ANODE COLLECTORCATHODE, ANODE 2 3 EMITTER4CATHODE 2 3 E ..
FOD814A ,4-Pin DIP Phototransistor Output OptocouplerFeatures Description AC input response (FOD814 only) The FOD814 consists of two gallium arsenide in ..
FOD817A ,4-Pin DIP Phototransistor Output OptocouplerFEATURES• Applicable to Pb-free IR reflow soldering• Compact 4-pin package1• Current transfer ratio ..
FOD817A ,4-Pin DIP Phototransistor Output OptocouplerBLOCK DIAGRAMFOD817C: 200-400%FOD817D: 300-600%• C-UL, UL and VDE approved• High input-output isola ..
FOD817A300 ,4-Pin DIP Phototransistor Output OptocouplerFEATURES• Applicable to Pb-free IR reflow soldering• Compact 4-pin package1• Current transfer ratio ..
FDD8424H
40V Dual N & P-Channel PowerTrench?MOSFET
® FDD8424H Dual N & P-Channel PowerTrench MOSFET February 2013 FDD8424H ® Dual N & P-Channel PowerTrench MOSFET� N-Channel: 40V, 20A, 24m�� P-Channel: -40V, -20A, 54m� Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s � Max r = 24m� at V = 10V, I = 9.0A DS(on) GS D advanced PowerTrench- process that has been especially � Max r = 30m� at V = 4.5V, I = 7.0A DS(on) GS D tailored to minimize on-state resistance and yet maintain superior switching performance. Q2: P-Channel � Max r = 54m� at V = -10V, I = -6.5A DS(on) GS D Application � Max r = 70m� at V = -4.5V, I = -5.6A DS(on) GS D � Inverter � Fast switching speed � H-Bridge � RoHS Compliant D1 D2 D1/D2 G1 G2 G2 S2 G1 S1 S1 S2 Dual DPAK 4L N-Channel P-Channel MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 40 -40 V DS V Gate to Source Voltage ±20 ±20 V GS Drain Current - Continuous (Package Limited) 20 -20 - Continuous (Silicon Limited) T = 25°C 26 -20 C I A D - Continuous T = 25°C 9.0 -6.5 A - Pulsed 55 -40 Power Dissipation for Single Operation T = 25°C (Note 1) 30 35 C P T = 25°C (Note 1a) 3.1 W D A T = 25°C (Note 1b) 1.3 A E Single Pulse Avalanche Energy (Note 3) 29 33 mJ AS T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 4.1 �JC °C/W R Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.5 �JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8424H FDD8424H TO-252-4L 13” 12mm 2500 units 1 ©2013 FDD8424H Rev.C1
