FDD7N20TM ,N-Channel UniFETTM MOSFET 200V, 5A, 690m?Applications• LCD/LED/PDP TV• Consumer Appliances• Lighting• Uninterruptible Power Supply• AC-DC Po ..
FDD7N20TM ,N-Channel UniFETTM MOSFET 200V, 5A, 690m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor s high voltage •R = 580 mΩ (Typ.) ..
FDD8424H ,40V Dual N & P-Channel PowerTrench?MOSFETGeneral DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are p ..
FDD8444 ,40V N-Channel PowerTrench?MOSFETFeatures Typ r = 4mΩ at V = 10V, I = 50A Automotive Engine ControlDS(on) GS D ..
FDD8444L , N-Channel PowerTrench® MOSFET
FDD8444L , N-Channel PowerTrench® MOSFET
FOD4218 ,6-Pin DIP 800V Random Phase Triac Driver Output OptocouplerApplications Solid-state relays Industrial controlsLighting controls Static power switchesAC motor ..
FOD617B ,4-Pin High Operating Temperature Phototransistor OptocouplersBlock DiagramANODE, CATHODE 1 4 COLLECTOR1 4ANODE COLLECTORCATHODE, ANODE 2 3 EMITTER4CATHODE 2 3 E ..
FOD814A ,4-Pin DIP Phototransistor Output OptocouplerBlock DiagramANODE, CATHODE 1 4 COLLECTOR1 4ANODE COLLECTORCATHODE, ANODE 2 3 EMITTER4CATHODE 2 3 E ..
FOD814A ,4-Pin DIP Phototransistor Output OptocouplerFeatures Description AC input response (FOD814 only) The FOD814 consists of two gallium arsenide in ..
FOD817A ,4-Pin DIP Phototransistor Output OptocouplerFEATURES• Applicable to Pb-free IR reflow soldering• Compact 4-pin package1• Current transfer ratio ..
FOD817A ,4-Pin DIP Phototransistor Output OptocouplerBLOCK DIAGRAMFOD817C: 200-400%FOD817D: 300-600%• C-UL, UL and VDE approved• High input-output isola ..
FDD7N20TM
N-Channel UniFETTM MOSFET 200V, 5A, 690m?
TM FDD7N20 N-Channel UniFET MOSFET March 2013 FDD7N20 TM N-Channel UniFET MOSFET 200 V, 5 A, 690 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor s high voltage •R = 580 mΩ (Typ.) @ VGS = 10 V, I = 2.5 A DS(on) D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 5 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low Crss (Typ. 5 pF) energy strength. This device family is suitable for switching power • 100% Avalanche Tested converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • RoHS Compliant Applications • LCD/LED/PDP TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D D G G TO-252 S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDD7N20 Unit V Drain to Source Voltage 200 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 5 C I Drain Current A D o - Continuous (T = 100 C) 3 C I Drain Current - Pulsed (Note 1) 15 A DM E Single Pulsed Avalanche Energy (Note 2) 62.5 mJ AS I Avalanche Current (Note 1) 5 A AR E Repetitive Avalanche Energy (Note 1) 4.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 43 W C P Power Dissipation D o o - Derate above 25C0.34W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDD7N20 Unit R Thermal Resistance, Junction to Case, Max. 2.9 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 110 JA ©2007 1 FDD7N20 Rev. C0
