FDD6782A ,N-Channel PowerTrench® MOSFET 25V, 10.5mOhmsApplications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus ArchitectureD ..
FDD6N25TM , 250V N-Channel MOSFET
FDD6N25TM , 250V N-Channel MOSFET
FDD6N25TM , 250V N-Channel MOSFET
FDD6N25TM , 250V N-Channel MOSFET
FDD6N50 ,N-Channel UniFETTM MOSFET 500V, 6A, 900m?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDDGGGDI-PAK ..
FOD3150 ,High Noise Immunity, 1.0A Output Current, Gate Drive Optocouplerapplications, and high performance Wide supply voltage range from 15V to 30Vpower system.Fast switc ..
FOD4116 ,6-Pin DIP 600V Zero Crossing Triac Driver Output OptocouplerApplications Solid-state relays Industrial controls Lighting controlsStatic power switches AC motor ..
FOD420 ,Random Phase Snubberless Triac DriverApplications Solid-state relays Industrial controlsLighting controls Static power switchesAC motor ..
FOD4208 ,Random Phase Snubberless Triac DriverApplications Solid-state relays Industrial controlsLighting controls Static power switchesAC motor ..
FOD4216 ,Random Phase Snubberless Triac DriverFeatures Description300mA on-state current The FOD420, FOD4208, FOD4216 and FOD4218devices consist ..
FOD4218 ,6-Pin DIP 800V Random Phase Triac Driver Output OptocouplerApplications Solid-state relays Industrial controlsLighting controls Static power switchesAC motor ..
FDD6782A
N-Channel PowerTrench® MOSFET 25V, 10.5mOhms
® FDD6782A N-Channel Power Trench MOSFET January 2009 FDD6782A ® N-Channel PowerTrench MOSFET 25 V, 10.5 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max r = 10.5 mΩ at V = 10 V, I = 14.9 A DS(on) GS D improve the overall efficiency of DC/DC converters using either Max r = 24.0 mΩ at V = 4.5 V, I = 11.0 A DS(on) GS D synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r and fast 100% UIL test DS(on) switching speed. RoHS Compliant Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings T = 25 °C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 20 C -Continuous (Silicon limited) T = 25 °C 42 C I A D -Continuous T = 25 °C (Note 1a) 20 A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 12 mJ AS Power Dissipation T = 25 °C 31 C P W D Power Dissipation T = 25 °C (Note 1a) 3.7 A T , T Operating and Storage Junction Temperature Range -55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.8 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD6782A FDD6782A D-PAK (TO-252) 13 ’’ 12 mm 2500 units 1 ©2009 FDD6782A Rev.C
