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FDD6778AFAIN/a10010avai25V N-Channel PowerTrench?MOSFET


FDD6778A ,25V N-Channel PowerTrench?MOSFETApplications„ Vcore DC-DC for Desktop Computers and Servers„ VRM for Intermediate Bus ArchitectureD ..
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FDD6N25TM , 250V N-Channel MOSFET
FDD6N25TM , 250V N-Channel MOSFET
FDD6N25TM , 250V N-Channel MOSFET
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FDD6778A
25V N-Channel PowerTrench?MOSFET
® FDD6778A N-Channel PowerTrench MOSFET January 2009 FDD6778A ® N-Channel PowerTrench MOSFET 25 V, 14.0 mΩ Features General Description This N-Channel MOSFET has been designed specifically to „ Max r = 14.0 mΩ at V = 10 V, I = 10.0 A DS(on) GS D improve the overall efficiency of DC/DC converters using either „ Max r = 30.0 mΩ at V = 4.5 V, I = 9.7 A DS(on) GS D synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r and fast DS(on) „ 100% UIL tested switching speed. „ RoHS Compliant Applications „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings T = 25 °C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 10 C -Continuous (Silicon limited) T = 25 °C 30 C I A D -Continuous T = 25 °C (Note 1a) 12 A -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 12 mJ AS Power Dissipation T = 25 °C 24 C P W D Power Dissipation T = 25 °C (Note 1a) 3.7 A T , T Operating and Storage Junction Temperature Range -55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 6.2 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD6778A FDD6778A D-PAK (TO-252) 13 ’’ 12 mm 2500 units ©2009 1 FDD6778A Rev.C
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