FDD6690A ,N-Channel, Logic Level, PowerTrench MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET is produced using• 46 A, 30 V. R = 0.0125 Ω @ ..
FDD6692 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 54 A, 30 V. R = 12 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD6696 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 50A, 30 V R = 8.0 mΩ @ V = 10 VDS(ON) GSspecifical ..
FDD6760A ,25V N-Channel PowerTrench?MOSFETApplications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus ArchitectureD ..
FDD6770A ,25V N-Channel PowerTrench?MOSFETApplications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus ArchitectureD ..
FDD6778A ,25V N-Channel PowerTrench?MOSFETApplications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus ArchitectureD ..
FOD2741C ,8-PIN DIP Error Amplifier Optocouplerapplications. The device comes in a 8-pin dip white package.1
FOD2742A ,8-PIN SOIC Error Amplifier Optocoupler OPTICALLY ISOLATEDERROR AMPLIFIERFOD2742A FOD2742B FOD2742CDESCRIPTIONThe FOD2742 Opt ..
FOD2742AR1V ,8-PIN SOIC Error Amplifier OptocouplerAPPLICATIONS • Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pi ..
FOD2743B ,8-PIN DIP Error Amplifier OptocouplerAPPLICATIONS •Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pin ..
FOD2743C ,8-PIN DIP Error Amplifier Optocoupler OPTICALLY ISOLATEDERROR AMPLIFIERFOD2743A FOD2743B FOD2743CDESCRIPTIONThe FOD2743 Op ..
FOD3120 ,High Noise Immunity, 2.5A Output Current, Gate Drive OptocouplerFOD3120 — High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler ..
FDD6690A
N-Channel, Logic Level, PowerTrench MOSFET
FDD6690A September 2000 FDD6690A N-Channel, Logic Level, PowerTrench MOSFET Features General Description This N-Channel Logic level MOSFET is produced using • 46 A, 30 V. R = 0.0125 Ω @ V = 10 V DS(ON) GS Fairchild Semiconductor's advanced PowerTrench process R = 0.016 Ω @ V = 4.5 V. that has been especially tailored to minimize the on state DS(ON) GS resistance and yet maintain low gate charge for superior • Low gate charge (17nC typical). switching performance. • Fast switching speed. Applications • High performance trench technology for extremely low R . • DC/DC converter DS(ON) • Motor drives D D G G S TO-252 S o T =25 C unless otherwise noted A Absolute Maximum Ratings Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS ± I Drain Current - Continuous (Note 1) 46 A D (Note 1a) 12 Drain Current - Pulsed 100 o P Maximum Power Dissipation @ T = 25 C (Note 1) 50 W D C o T = 25 C (Note 1a) 2.8 A o (Note 1b) T = 25 C 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1a) 2.5 C/W JC ° θ R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 C/W JA ° θ Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6690A FDD6690A 13’’ 16mm 2500 2000 Fairchild Semiconductor International FDD6690A, Rev. D
