FDD6688S ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDD6688S ,30V N-Channel PowerTrench SyncFETApplications • High performance trench technology for extremely low R DS(ON)• DC/DC converter • Mo ..
FDD6690 ,N-Channel/ Logic Level/ PowerTrenchTM MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDD6690 ,N-Channel/ Logic Level/ PowerTrenchTM MOSFETApplications• DC/DC converter• High performance trench technology for extremelylow R• Motor Drives ..
FDD6690A ,N-Channel, Logic Level, PowerTrench MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET is produced using• 46 A, 30 V. R = 0.0125 Ω @ ..
FDD6692 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 54 A, 30 V. R = 12 mΩ @ V = 10 V DS(ON) GSspeci ..
FOD2741B ,8-PIN DIP Error Amplifier OptocouplerAPPLICATIONS • Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pi ..
FOD2741B ,8-PIN DIP Error Amplifier Optocoupler OPTICALLY ISOLATEDERROR AMPLIFIERFOD2741A FOD2741B FOD2741CDESCRIPTIONThe FOD2741 Op ..
FOD2741C ,8-PIN DIP Error Amplifier Optocouplerapplications. The device comes in a 8-pin dip white package.1
FOD2742A ,8-PIN SOIC Error Amplifier Optocoupler OPTICALLY ISOLATEDERROR AMPLIFIERFOD2742A FOD2742B FOD2742CDESCRIPTIONThe FOD2742 Opt ..
FOD2742AR1V ,8-PIN SOIC Error Amplifier OptocouplerAPPLICATIONS • Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pi ..
FOD2743B ,8-PIN DIP Error Amplifier OptocouplerAPPLICATIONS •Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pin ..
FDD6688S
30V N-Channel PowerTrench SyncFET
FDD6688S May 2004 FDD6688S ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDD6688S is designed to replace a single TO-252 • 88 A, 30 V. R = 5.1 mΩ @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 6.3 mΩ @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Low gate charge (31 nC typical) R and low gate charge. The FDD6688S includes DS(ON) an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • Fast switching Applications • High performance trench technology for extremely low R DS(ON) • DC/DC converter • Motor Drives D D G G S D-PAK TO-252 (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 20 GSS I Drain Current – Continuous (Note 3) 88 A D – Pulsed (Note 1a) 100 P Power Dissipation for Single Operation (Note 1) 69 W D (Note 1a) 3.1 (Note 1b) 1.3 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 1.8 °C/W θJC Thermal Resistance, Junction-to-Ambient (Note 1a) 40 R θJA (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6688S FDD6688S D-PAK (TO-252) 13’’ 12mm 2500 units FDD6688 Rev C (W) 2004
