FDU6688 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 84 A, 30 V. R = 5 mΩ @ V = 10 VDS(ON) GSspecifical ..
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FDD6688-FDU6688
30V N-Channel PowerTrench MOSFET
FDD6688/FDU6688 June 2004 FDD6688/FDU6688 Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 84 A, 30 V. R = 5 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 6 mW @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge low gate charge, low RDS( ON) and fast switching speed. · Fast switching Applications · High performance trench technology for extremely · DC/DC converter low R DS(ON) · Motor Drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbo Parameter Ratings Units l V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 GSS I Drain Current – Continuous (Note 3) 84 A D – Pulsed (Note 1a) 100 P Power Dissipation for Single Operation (Note 1) 83 W D (Note 1a) 3.8 (Note 1b) 1.6 T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 1.8 R °C/W qJC Thermal Resistance, Junction-to-Ambient (Note 1a) 40 R qJA (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6688 FDD6688 D-PAK (TO-252) 13’’ 12mm 2500 units FDU6688 FDU6688 I-PAK (TO-251) Tube N/A 75 Ó2004 FDD6688/FDU6688 Rev F(W)
