FDD6685 ,30V P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6688 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 84 A, 30 V. R = 5 mΩ @ V = 10 VDS(ON) GSspecifical ..
FDD6688S ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDD6688S ,30V N-Channel PowerTrench SyncFETApplications • High performance trench technology for extremely low R DS(ON)• DC/DC converter • Mo ..
FDD6690 ,N-Channel/ Logic Level/ PowerTrenchTM MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDD6690 ,N-Channel/ Logic Level/ PowerTrenchTM MOSFETApplications• DC/DC converter• High performance trench technology for extremelylow R• Motor Drives ..
FOD2712R2 ,8-PIN SOIC Error Amplifier OptocouplerAPPLICATIONS •Power system for workstations•Telecom central office supply •Telecom bricksPIN DEFINIT ..
FOD2741A ,8-PIN DIP Error Amplifier OptocouplerBLOCK DIAGRAM• Optocoupler, precision reference and error amplifier in single package• 2.5V referenc ..
FOD2741A ,8-PIN DIP Error Amplifier OptocouplerAPPLICATIONS • Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pi ..
FOD2741ASDV ,8-PIN DIP Error Amplifier OptocouplerFEATURESFUNCTIONAL
FOD2741B ,8-PIN DIP Error Amplifier OptocouplerAPPLICATIONS • Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pi ..
FOD2741B ,8-PIN DIP Error Amplifier Optocoupler OPTICALLY ISOLATEDERROR AMPLIFIERFOD2741A FOD2741B FOD2741CDESCRIPTIONThe FOD2741 Op ..
FDD6685
30V P-Channel PowerTrench MOSFET
FDD6685 February 2004 FDD6685 Ò 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of · –40 A, –30 V. R = 20 mW @ V = –10 V DS(ON) GS R = 30 mW @ V = –4.5 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench · Fast switching speed process. It has been optimized for power management applications requiring a wide range of gave drive · High performance trench technology for extremely low R DS(ON) voltage ratings (4.5V – 25V). · High power and current handling capability · Qualified to AEC Q101 S D G G S TO-252 D o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±25 I D –40 Continuous Drain Current @T =25°C (Note 3) C @T =25°C (Note 1a) A A –11 Pulsed, PW £ 100µs (Note 1b) –100 P Power Dissipation for Single Operation (Note 1) 52 W D (Note 1a) 3.8 (Note 1b) 1.6 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 2.9 °C/W qJC Thermal Resistance, Junction-to-Ambient (Note 1a) 40 R °C/W qJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W qJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD6685 Rev D (W) Ó2004
