FDD6680S ,30V N-Channel PowerTrench SyncFETApplications• High power and current handling capability• DC/DC converter.• Motor DrivesDDGGSTO-252 ..
FDD6680S ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FDD6682 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 75 A, 30 V R = 6.2 mΩ @ V = 10 VDS(ON) GSspecifica ..
FDD6685 ,30V P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6688 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 84 A, 30 V. R = 5 mΩ @ V = 10 VDS(ON) GSspecifical ..
FDD6688S ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FOD2711T ,8-PIN DIP Error Amplifier OptocouplerFEATURES• Optocoupler, precision reference and error amplifier in single packageNC LED1 8• 1.240V ± ..
FOD2711TV ,8-PIN DIP Error Amplifier Optocouplerapplications.8The device comes in a 8-pin dip white package.11 FUNCTIONAL
FOD2711V ,8-PIN DIP Error Amplifier OptocouplerFEATURES• Optocoupler, precision reference and error amplifier in single packageNC LED1 8• 1.240V ± ..
FOD2712AR2 , Optically Isolated Error Amplifier
FOD2712AR2V , Optically Isolated Error Amplifier
FOD2712R1 ,8-PIN SOIC Error Amplifier Optocoupler OPTICALLY ISOLATEDERROR AMPLIFIERFOD2712DESCRIPTIONPACKAGE DIMENSIONSThe FOD2712 O ..
FDD6680S
30V N-Channel PowerTrench SyncFET
FDD6680S December 2000 FDD6680S ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDD6680S is designed to replace a single • 55 A, 30 V R = 11 mΩ @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 17 mΩ @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET Schottky body diode R and low gate charge. The FDD6680S includes DS(ON) an integrated Schottky diode using Fairchild’s • Low gate charge (17nC typical) monolithic SyncFET technology. The performance of the FDD6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the • High performance trench technology for extremely FDD6680A in parallel with a Schottky diode. low R DS(ON) Applications • High power and current handling capability • DC/DC converter . • Motor Drives D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 3) 55 A D – Pulsed (Note 1a) 100 P Power Dissipation (Note 1) 60 W D (Note 1a) 3.1 (Note 1b) 1.3 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Note 1) 2.1 °C/W θJC Thermal Resistance, Junction-to-Ambient (Note 1a) 40 R °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6680S FDD6680S 13’’ 16mm 2500 units 2001 FDD6680S Rev D(W)
