FDD6680 ,N-Channel Logic Level PWM Optimized PowerTrench TM MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET has been designed 55 A, 30 V. R = 0.010 Ω @ V ..
FDD6680_NL ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild• 46 A, 30 V R = 10 mΩ @ V = 10 VDS(ON) GS ..
FDD6680A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 56 A, 30 V R = 9.5 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD6680A. ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 56 A, 30 V R = 9.5 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD6680AS ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6680S ,30V N-Channel PowerTrench SyncFETApplications• High power and current handling capability• DC/DC converter.• Motor DrivesDDGGSTO-252 ..
FOD270LSD ,8-Pin DIP Single-Channel Low Input Current High Gain Split Darlington Output OptocouplerFEATURES•Low power consumptionVN/C 1 8 + 1 8 VCCCC•Low input current - 0.5 mAVF1•Available in singl ..
FOD2711 ,OPTICALLY ISOLATED ERROR AMPLIFIERAPPLICATIONS • Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pi ..
FOD2711S ,8-PIN DIP Error Amplifier Optocouplerapplications.8The device comes in a 8-pin dip white package.11 FUNCTIONAL
FOD2711SD ,8-PIN DIP Error Amplifier OptocouplerAPPLICATIONS •Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pin ..
FOD2711SDV ,8-PIN DIP Error Amplifier OptocouplerAPPLICATIONS •Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pin ..
FOD2711SDV ,8-PIN DIP Error Amplifier Optocoupler OPTICALLY ISOLATEDERROR AMPLIFIERFOD2711DESCRIPTIONThe FOD2711 Optically Isolated Am ..
FDD6680
N-Channel Logic Level PWM Optimized PowerTrench TM MOSFET
FDD6680 July 1999 FDD6680 N-Channel Logic Level PWM Optimized PowerTrench™ MOSFET Features General Description This N-Channel Logic level MOSFET has been designed 55 A, 30 V. R = 0.010 Ω @ V = 10 V DS(on) GS specifically to improve the overall efficiency of DC/DC R = 0.015 Ω @ V = 4.5 V. converters using either synchronous or conventional DS(on) GS switching PWM controllers. Optimized for use in high frequency DC/DC converters. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable R DS(on) Low gate charge (19nC typical). specifications. The result is a MOSFET that is easier to drive, even at very high frequencies, and DC/DC power Very Fast switching. supply designs with higher overall efficiency. Applications • DC/DC converter Motor drives D D G G S S TO-252 o Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Maximum Drain Current -Continuous (Note 1) 55 A D (Note 1a) 14 Maximum Drain Current -Pulsed 100 o P Maximum Power Dissipation @ T = 25 C 60 W (Note 1) D C o T = 25 C (Note 1a) 3.2 A o T = 25 C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J stg Thermal Characteristics R Thermal Resistance, Junction-to- Case (Note 1) 2.1 °C/W θJC Thermal Resistance, Junction-to- Ambient 40 R (Note 1a) °C/W θJA (Note 1b) 96 C/W ° Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6680 FDD6680 13’’ 16mm 2500 1999 FDD6680, Rev.B
