FDD6680_NL ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild• 46 A, 30 V R = 10 mΩ @ V = 10 VDS(ON) GS ..
FDD6680A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 56 A, 30 V R = 9.5 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD6680A. ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 56 A, 30 V R = 9.5 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD6680AS ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6680S ,30V N-Channel PowerTrench SyncFETApplications• High power and current handling capability• DC/DC converter.• Motor DrivesDDGGSTO-252 ..
FDD6680S ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Min Typ ..
FOD270LSD ,8-Pin DIP Single-Channel Low Input Current High Gain Split Darlington Output OptocouplerFEATURES•Low power consumptionVN/C 1 8 + 1 8 VCCCC•Low input current - 0.5 mAVF1•Available in singl ..
FOD2711 ,OPTICALLY ISOLATED ERROR AMPLIFIERAPPLICATIONS • Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pi ..
FOD2711S ,8-PIN DIP Error Amplifier Optocouplerapplications.8The device comes in a 8-pin dip white package.11 FUNCTIONAL
FOD2711SD ,8-PIN DIP Error Amplifier OptocouplerAPPLICATIONS •Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pin ..
FOD2711SDV ,8-PIN DIP Error Amplifier OptocouplerAPPLICATIONS •Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pin ..
FOD2711SDV ,8-PIN DIP Error Amplifier Optocoupler OPTICALLY ISOLATEDERROR AMPLIFIERFOD2711DESCRIPTIONThe FOD2711 Optically Isolated Am ..
FDD6680_NL-FDU6680
30V N-Channel PowerTrench MOSFET
FDD6680/FDU6680 November 2004 FDD6680 / FDU6680 Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild · 46 A, 30 V R = 10 mW @ V = 10 V DS(ON) GS Semiconductor’s advanced PowerTrench process that R = 15 mW @ V = 4.5 V DS(ON) GS has been especially tailored to minimize the on state resistance and yet maintain low gate charge for · Low gate charge superior switching performance. · Fast Switching Speed Applications · DC/DC converter · High performance trench technology for extremely low R · Motor Drives DS(ON) D D G I-PAK G S (TO-251AA) D-PAK TO-252 G D S (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Continuous Drain Current @T =25°C (Note 3) 46 A D C @T =25°C (Note 1a) 12 A Pulsed (Note 1a) 100 P Power Dissipation @T =25°C (Note 3) 56 W D C @T =25°C (Note 1a) 3.3 A @T =25°C (Note 1b) 1.5 A T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 2.7 R °C/W qJC Thermal Resistance, Junction-to-Ambient (Note 1a) 45 RqJA (Note 1b) R 96 qJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6680 FDD6680 D-PAK (TO-252) 13’’ 12mm 2500 units FDU6680 FDU6680 I-PAK (TO-251) Tube N/A 75 Ó2004 FDD6680/FDU6680 Rev. C1(W)
