FDD6676S ,30V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDD6680 ,N-Channel Logic Level PWM Optimized PowerTrench TM MOSFETGeneral DescriptionThis N-Channel Logic level MOSFET has been designed 55 A, 30 V. R = 0.010 Ω @ V ..
FDD6680_NL ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild• 46 A, 30 V R = 10 mΩ @ V = 10 VDS(ON) GS ..
FDD6680A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 56 A, 30 V R = 9.5 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD6680A. ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 56 A, 30 V R = 9.5 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD6680AS ,30V N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FOD260L ,LVTTL/LVCMOS 3.3V High Speed-10 MBit/s Logic Gate OptocouplersFeatures Switching power supplies Compact SO8 package (except FOD260L – 8-pin DIP) Pulse transforme ..
FOD270LSD ,8-Pin DIP Single-Channel Low Input Current High Gain Split Darlington Output OptocouplerFEATURES•Low power consumptionVN/C 1 8 + 1 8 VCCCC•Low input current - 0.5 mAVF1•Available in singl ..
FOD2711 ,OPTICALLY ISOLATED ERROR AMPLIFIERAPPLICATIONS • Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pi ..
FOD2711S ,8-PIN DIP Error Amplifier Optocouplerapplications.8The device comes in a 8-pin dip white package.11 FUNCTIONAL
FOD2711SD ,8-PIN DIP Error Amplifier OptocouplerAPPLICATIONS •Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pin ..
FOD2711SDV ,8-PIN DIP Error Amplifier OptocouplerAPPLICATIONS •Power supplies regulation • DC to DC convertersPIN DEFINITIONSPin Number Pin Name Pin ..
FDD6676S
30V N-Channel PowerTrench MOSFET
FDD6676S December 2002 FDD6676S Ò 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK · 78 A, 30 V R = 6.0 mW @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 7.1 mW @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low · Low gate charge R and low gate charge. The FDD6676S includes DS(ON) an integrated Schottky diode using Fairchild’s · Fast Switching monolithic SyncFET technology. Applications · High performance trench technology for extremely low R DS(ON) · DC/DC converter D D G G S D-PAK TO-252 (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±16 V GSS I Drain Current – Continuous (Note 3) 78 A D – Pulsed (Note 1a) 100 P Power Dissipation for Single Operation (Note 1) 70 W D (Note 1a) 3.1 (Note 1b) 1.3 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 1.8 R °C/W qJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W qJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W qJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6676S FDD6676S 13’’ 12mm 2500 units FDD6676S Rev D (W) Ó2002
